GB1113447A

GB1113447A – Electrical signal translating apparatus
– Google Patents

GB1113447A – Electrical signal translating apparatus
– Google Patents
Electrical signal translating apparatus

Info

Publication number
GB1113447A

GB1113447A
GB51051/67A
GB5105167A
GB1113447A
GB 1113447 A
GB1113447 A
GB 1113447A
GB 51051/67 A
GB51051/67 A
GB 51051/67A
GB 5105167 A
GB5105167 A
GB 5105167A
GB 1113447 A
GB1113447 A
GB 1113447A
Authority
GB
United Kingdom
Prior art keywords
electrical signal
signal translating
translating apparatus
semi
conductor
Prior art date
1963-06-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB51051/67A
Inventor
John Battiscombe Gunn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-06-10
Filing date
1965-05-21
Publication date
1968-05-15

1965-05-21
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp

1965-05-21
Priority claimed from GB21756/65A
external-priority
patent/GB1113442A/en

1968-05-15
Publication of GB1113447A
publication
Critical
patent/GB1113447A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS

H03B9/00—Generation of oscillations using transit-time effects

H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices

H—ELECTRICITY

H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

H10N80/00—Bulk negative-resistance effect devices

H10N80/10—Gunn-effect devices

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/80—Generating trains of sinusoidal oscillations

Abstract

1,113,447. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 51051/67. Divided out of 1,113,442. Addition to 1,070,261. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to an apparatus in which means such as a pick-off electrode are used to detect the presence of a high field travelling domain in a semi-conductor body.

GB51051/67A
1963-06-10
1965-05-21
Electrical signal translating apparatus

Expired

GB1113447A
(en)

Applications Claiming Priority (3)

Application Number
Priority Date
Filing Date
Title

US28670063A

1963-06-10
1963-06-10

US374758A

US3365583A
(en)

1963-06-10
1964-06-12
Electric field-responsive solid state devices

GB21756/65A

GB1113442A
(en)

1964-06-12
1965-05-21
Electrical signal translating apparatus

Publications (1)

Publication Number
Publication Date

GB1113447A
true

GB1113447A
(en)

1968-05-15

Family
ID=23099796
Family Applications (3)

Application Number
Title
Priority Date
Filing Date

GB21796/64A
Expired

GB1070261A
(en)

1963-06-10
1964-05-26
A semiconductor device

GB50950/67A
Expired

GB1113446A
(en)

1963-06-10
1965-05-21
A semiconductor device

GB51051/67A
Expired

GB1113447A
(en)

1963-06-10
1965-05-21
Electrical signal translating apparatus

Family Applications Before (2)

Application Number
Title
Priority Date
Filing Date

GB21796/64A
Expired

GB1070261A
(en)

1963-06-10
1964-05-26
A semiconductor device

GB50950/67A
Expired

GB1113446A
(en)

1963-06-10
1965-05-21
A semiconductor device

Country Status (6)

Country
Link

US
(1)

US3365583A
(en)

DE
(1)

DE1295026C2
(en)

ES
(1)

ES314045A1
(en)

FR
(1)

FR1398348A
(en)

GB
(3)

GB1070261A
(en)

SE
(1)

SE332447B
(en)

Families Citing this family (56)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB1161782A
(en)

*

1965-08-26
1969-08-20
Associated Semiconductor Mft
Improvements in Semiconductor Devices.

US3465265A
(en)

*

1965-09-13
1969-09-02
Tokyo Shibaura Electric Co
Frequency modulator using an n-type semiconductor oscillation device

GB1136254A
(en)

*

1965-10-27
1968-12-11
Standard Telephones Cables Ltd
Solid state scanning system

GB1134441A
(en)

*

1966-01-14
1968-11-20
Standard Telephones Cables Ltd
A semiconductive circuit arrangement

US3453502A
(en)

*

1965-10-27
1969-07-01
Int Standard Electric Corp
Microwave generators

US3475078A
(en)

*

1965-11-15
1969-10-28
Bell Telephone Labor Inc
Gunn-effect light modulator

DE1274674B
(en)

*

1965-11-26
1968-08-08
Telefunken Patent

Method for changing that frequency of an amplifying semiconductor component at which maximum de-damping takes place

US3439236A
(en)

*

1965-12-09
1969-04-15
Rca Corp
Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component

US3435307A
(en)

*

1966-01-17
1969-03-25
Ibm
Electrical shock wave devices and control thereof

US3846717A
(en)

*

1966-02-02
1974-11-05
Ibm
Bulk effect semiconductor oscillator including resonant low frequency input circuit

US3846714A
(en)

*

1966-02-02
1974-11-05
Ibm
Microwave oscillator

US3467896A
(en)

*

1966-03-28
1969-09-16
Varian Associates
Heterojunctions and domain control in bulk negative conductivity semiconductors

US3558923A
(en)

*

1966-04-12
1971-01-26
Bell Telephone Labor Inc
Circuit arrangement including two-valley semiconductor device

US3508210A
(en)

*

1966-04-12
1970-04-21
Bell Telephone Labor Inc
Memory element using two-valley semiconductor

US3440425A
(en)

*

1966-04-27
1969-04-22
Bell Telephone Labor Inc
Gunn-effect devices

FR1489781A
(en)

*

1966-06-10
1967-07-28
Radiotechnique Coprim Rtc

Semiconductor device for generating and amplifying electrical signals at very high frequencies

GB1138244A
(en)

*

1966-06-28
1968-12-27
Standard Telephones Cables Ltd
Semiconductive circuit arrangement

US3624461A
(en)

*

1966-07-11
1971-11-30
Bell Telephone Labor Inc
Two-valley semiconductor oscillator

US3528035A
(en)

*

1966-07-11
1970-09-08
Bell Telephone Labor Inc
Two-valley semiconductive devices

US3452221A
(en)

*

1966-07-13
1969-06-24
Ibm
Electrical shock wave (gunn effect) logical apparatus

GB1122259A
(en)

*

1966-07-15
1968-08-07
Standard Telephones Cables Ltd
A scanned line radiation source

GB1205211A
(en)

*

1966-07-21
1970-09-16
Nat Res Dev
Transferred electron oscillators

US3487338A
(en)

*

1966-09-21
1969-12-30
Rca Corp
Three terminal semiconductor device for converting amplitude modulated signals into frequency modulated signals

US3462617A
(en)

*

1967-01-20
1969-08-19
Bell Telephone Labor Inc
Current function generator

US3452222A
(en)

*

1967-02-01
1969-06-24
Bell Telephone Labor Inc
Circuits employing semiconductive devices characterized by traveling electric field domains

GB1146557A
(en)

*

1967-02-14
1969-03-26
Standard Telephones Cables Ltd
A semiconductive circuit arrangement

US3509491A
(en)

*

1967-06-02
1970-04-28
Nasa
Voltage-tunable gunn-type microwave generator

GB1216081A
(en)

*

1967-06-22
1970-12-16
Nat Res Dev
Electronic logic element

US3453560A
(en)

*

1967-07-05
1969-07-01
Rca Corp
Grooved bulk semiconductor oscillator

US3667010A
(en)

*

1967-07-06
1972-05-30
Nasa
Gunn-type solid-state devices

US3581232A
(en)

*

1967-07-14
1971-05-25
Hitachi Ltd
Tunable semiconductor bulk negative resistance microwave oscillator

US3538400A
(en)

*

1967-07-31
1970-11-03
Nippon Electric Co
Semiconductor gunn effect switching element

US3535601A
(en)

*

1967-07-31
1970-10-20
Nippon Electric Co
Frequency-selective semiconductor oscillation device

US3691481A
(en)

*

1967-08-22
1972-09-12
Kogyo Gijutsuin
Negative resistance element

US3451011A
(en)

*

1967-09-22
1969-06-17
Bell Telephone Labor Inc
Two-valley semiconductor devices and circuits

US3548340A
(en)

*

1967-09-27
1970-12-15
Bell Telephone Labor Inc
Two – valley semiconductor pulse generator and related circuits

US3621306A
(en)

*

1967-09-29
1971-11-16
Telefunken Patent
Controlled gunn-effect device

US3535654A
(en)

*

1967-12-04
1970-10-20
Ibm
Solid state oscillator having large microwave output

JPS4813994B1
(en)

*

1968-03-15
1973-05-02

US3577018A
(en)

*

1968-03-15
1971-05-04
Nippon Electric Co
High-speed logic device employing a gunn-effect element and a semiconductor laser element

US3518502A
(en)

*

1968-04-25
1970-06-30
Bell Telephone Labor Inc
Current function generators using two-valley semiconductor devices

US3531698A
(en)

*

1968-05-21
1970-09-29
Hewlett Packard Co
Current control in bulk negative conductance materials

US3558929A
(en)

*

1968-05-27
1971-01-26
Bell Telephone Labor Inc
Bipolar pulse regenerator

JPS543352B1
(en)

*

1968-08-27
1979-02-21

US3548339A
(en)

*

1968-11-26
1970-12-15
Bell Telephone Labor Inc
Circuits using two-valley semiconductor devices

US3601713A
(en)

*

1969-02-06
1971-08-24
United Aircraft Corp
Shaped bulk negative-resistance device oscillators and amplifiers

US3617911A
(en)

*

1969-04-01
1971-11-02
Bell Telephone Labor Inc
Wide band direct-current-pumped semiconductor maser

US3900881A
(en)

*

1970-08-19
1975-08-19
Hitachi Ltd
Negative resistance device and method of controlling the operation

US4021680A
(en)

*

1970-08-25
1977-05-03
Agency Of Industrial Science & Technology
Semiconductor device

US3832651A
(en)

*

1973-01-19
1974-08-27
Rca Corp
Dynamic dividing circuit for dividing an input frequency by two

US3832652A
(en)

*

1973-01-19
1974-08-27
Rca Corp
Dynamic dividing circuit for dividing an input frequency by at least three

US3836989A
(en)

*

1973-02-15
1974-09-17
Agency Ind Science Techn
Bulk semiconductor device

FR2408192A1
(en)

*

1977-11-04
1979-06-01
Thomson Csf

DYNAMIC MEMORY REGISTER ELEMENT USING THE GUNN EFFECT, AND OFFSET REGISTER CONSISTING OF SUCH ELEMENTS

US4539581A
(en)

*

1982-07-12
1985-09-03
The United States Of America As Represented By The Secretary Of The Army
Planar doped barrier transferred electron oscillator

US4978928A
(en)

*

1990-03-30
1990-12-18
The United States Of America As Represented By The Secretary Of The Navy
High frequency, frequency multiplier using parallel Gunn diodes

DE4442572C1
(en)

*

1994-11-30
1995-09-28
Schott Glaswerke
Protecting opening edges in shaped gas cooker cover body

Family Cites Families (16)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US2740940A
(en)

*

1950-12-08
1956-04-03
Bell Telephone Labor Inc
High speed negative resistance

US2794917A
(en)

*

1953-01-27
1957-06-04
Bell Telephone Labor Inc
High frequency negative resistance device

US2863056A
(en)

*

1954-02-01
1958-12-02
Rca Corp
Semiconductor devices

US2931958A
(en)

*

1954-05-03
1960-04-05
Nat Res Dev
Semi-conductor devices

DE1067933B
(en)

*

1955-12-22
1959-10-29
National Research Development Corporation, London; Vcrtr.: Dipl.-Ing. E. Schubert, Pat.-Anw., Siegen

Controlled semiconductor device with two electrodes. 1’9. 12. 56. Great Britain

NL100457C
(en)

*

1956-01-03

US2975377A
(en)

*

1956-08-07
1961-03-14
Ibm
Two-terminal semiconductor high frequency oscillator

AT209377B
(en)

*

1956-08-30
1960-06-10
Siemens Ag

Device for generating plasma oscillations in electronic semiconductors

FR1190542A
(en)

*

1956-08-30
1959-10-13
Siemens Ag

Method and device for producing plasma oscillations in electronic semiconductors

US2948837A
(en)

*

1956-09-04
1960-08-09
Mc Graw Edison Co
Solid state electronic switch and circuits therefor

US3019352A
(en)

*

1958-12-16
1962-01-30
Zenith Radio Corp
Tetrode transistor circuit

US3090014A
(en)

*

1959-12-17
1963-05-14
Bell Telephone Labor Inc
Negative resistance device modulator

US3167663A
(en)

*

1962-08-06
1965-01-26
Massachusetts Inst Technology
Magneto-semiconductor devices

GB1050160A
(en)

*

1962-08-29

US3215862A
(en)

*

1963-01-10
1965-11-02
Ibm
Semiconductor element in which negative resistance characteristics are produced throughout the bulk of said element

US3234482A
(en)

*

1963-04-23
1966-02-08
Bell Telephone Labor Inc
Stabilized ultrasonic amplifier

1964

1964-05-26
GB
GB21796/64A
patent/GB1070261A/en
not_active
Expired

1964-06-06
DE
DE19641295026
patent/DE1295026C2/en
not_active
Expired

1964-06-09
SE
SE06991/64A
patent/SE332447B/xx
unknown

1964-06-10
FR
FR977676A
patent/FR1398348A/en
not_active
Expired

1964-06-12
US
US374758A
patent/US3365583A/en
not_active
Expired – Lifetime

1965

1965-05-21
GB
GB50950/67A
patent/GB1113446A/en
not_active
Expired

1965-05-21
GB
GB51051/67A
patent/GB1113447A/en
not_active
Expired

1965-06-10
ES
ES0314045A
patent/ES314045A1/en
not_active
Expired

Also Published As

Publication number
Publication date

US3365583A
(en)

1968-01-23

SE332447B
(en)

1971-02-08

GB1113446A
(en)

1968-05-15

ES314045A1
(en)

1966-03-16

DE1295026C2
(en)

1974-03-28

DE1295026B
(en)

1969-05-14

GB1070261A
(en)

1967-06-01

FR1398348A
(en)

1965-05-07

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