GB1138084A – Method of vapour depositing a material in the form of a pattern
– Google Patents
GB1138084A – Method of vapour depositing a material in the form of a pattern
– Google Patents
Method of vapour depositing a material in the form of a pattern
Info
Publication number
GB1138084A
GB1138084A
GB33047/66A
GB3304766A
GB1138084A
GB 1138084 A
GB1138084 A
GB 1138084A
GB 33047/66 A
GB33047/66 A
GB 33047/66A
GB 3304766 A
GB3304766 A
GB 3304766A
GB 1138084 A
GB1138084 A
GB 1138084A
Authority
GB
United Kingdom
Prior art keywords
substrate
pattern
substrates
laser
devices
Prior art date
1966-07-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33047/66A
Inventor
Alan Douglas Brisbane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1966-07-22
Filing date
1966-07-22
Publication date
1968-12-27
1966-07-22
Application filed by Standard Telephone and Cables PLC
filed
Critical
Standard Telephone and Cables PLC
1966-07-22
Priority to GB33047/66A
priority
Critical
patent/GB1138084A/en
1966-10-17
Priority to GB46294/66A
priority
patent/GB1138556A/en
1967-05-31
Priority to US642403A
priority
patent/US3560258A/en
1967-07-20
Priority to NL6710051A
priority
patent/NL6710051A/xx
1967-07-21
Priority to FR115178A
priority
patent/FR1536496A/en
1967-07-22
Priority to ES343349A
priority
patent/ES343349A1/en
1967-10-17
Priority to FR124635A
priority
patent/FR94315E/en
1968-12-27
Publication of GB1138084A
publication
Critical
patent/GB1138084A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
B—PERFORMING OPERATIONS; TRANSPORTING
B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
B23K26/00—Working by laser beam, e.g. welding, cutting or boring
B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C14/24—Vacuum evaporation
C23C14/28—Vacuum evaporation by wave energy or particle radiation
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
Y10S430/146—Laser beam
Abstract
1,138,084. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 22 July, 1966, No. 33047/66. Heading H1K. [Also in Division C7] In a vapour deposition process of forming a pattern of a material such as Pt on a first substrate, e.g. cellular Si, the material is evaporated from a layer of said material on a second substrate in juxtaposition to said first substrate by focusing a converging beam of intense radiant energy, e.g. a laser beam on to the second substrate, the required pattern being formed by relative movement of the substrates with respect to the focus of the radiant beam. As shown in the Figure, infra red radiation from a laser is directed via mirror 1, compound lens 10, optical flat 8 on to substrate 5 of glass having a Pt film 7. A substrate 4 is spaced 50 microns beneath substrate 5 by mica separator 6. The substrates are mounted in vacuum vessel 3 on a co-ordinate table 2 which is moved during deposition to produce the required pattern. The deposited pattern forms the interconnections between the devices in an integrated circuit.
GB33047/66A
1966-07-22
1966-07-22
Method of vapour depositing a material in the form of a pattern
Expired
GB1138084A
(en)
Priority Applications (7)
Application Number
Priority Date
Filing Date
Title
GB33047/66A
GB1138084A
(en)
1966-07-22
1966-07-22
Method of vapour depositing a material in the form of a pattern
GB46294/66A
GB1138556A
(en)
1966-07-22
1966-10-17
Method of vapour depositing a material in the form of a pattern
US642403A
US3560258A
(en)
1966-07-22
1967-05-31
Pattern deposit by laser
NL6710051A
NL6710051A
(en)
1966-07-22
1967-07-20
FR115178A
FR1536496A
(en)
1966-07-22
1967-07-21
Laser deposition process
ES343349A
ES343349A1
(en)
1966-07-22
1967-07-22
Pattern deposit by laser
FR124635A
FR94315E
(en)
1966-07-22
1967-10-17
Laser deposition process.
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB33047/66A
GB1138084A
(en)
1966-07-22
1966-07-22
Method of vapour depositing a material in the form of a pattern
Publications (1)
Publication Number
Publication Date
GB1138084A
true
GB1138084A
(en)
1968-12-27
Family
ID=10347823
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB33047/66A
Expired
GB1138084A
(en)
1966-07-22
1966-07-22
Method of vapour depositing a material in the form of a pattern
Country Status (4)
Country
Link
US
(1)
US3560258A
(en)
ES
(1)
ES343349A1
(en)
GB
(1)
GB1138084A
(en)
NL
(1)
NL6710051A
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2030145A1
(en)
*
1969-01-15
1970-10-30
Ibm
GB2125830A
(en)
*
1982-08-24
1984-03-14
Mason Vactron Limited
Vacuum deposition apparatus and method
Families Citing this family (40)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3637410A
(en)
*
1968-12-18
1972-01-25
Gary L Stevens
Method of treating cathodo-luminescent phosphors
US3873339A
(en)
*
1972-03-30
1975-03-25
Corning Glass Works
Method of forming optical waveguide circuit path
US4042006A
(en)
*
1973-01-05
1977-08-16
Siemens Aktiengesellschaft
Pyrolytic process for producing a band-shaped metal layer on a substrate
US3886366A
(en)
*
1973-04-13
1975-05-27
Us Air Force
Compton back-scattered radiation source
JPS5157283A
(en)
*
1974-11-15
1976-05-19
Nippon Electric Co
Handotaikibanno bunkatsuhoho
DE2511390C2
(en)
*
1975-03-15
1984-03-15
Agfa-Gevaert Ag, 5090 Leverkusen
Method and device for the production of daylight projection screens as well as daylight projection screen produced according to this method
US4190759A
(en)
*
1975-08-27
1980-02-26
Hitachi, Ltd.
Processing of photomask
CA1105093A
(en)
*
1977-12-21
1981-07-14
Roland F. Drew
Laser deposition of metal upon transparent materials
US4388517A
(en)
*
1980-09-22
1983-06-14
Texas Instruments Incorporated
Sublimation patterning process
JPS57102016A
(en)
*
1980-12-17
1982-06-24
Hitachi Ltd
Pattern generator
US4472513A
(en)
*
1980-12-29
1984-09-18
Allied Corporation
Laser-synthesized catalysts
US4459937A
(en)
*
1981-04-27
1984-07-17
Rockwell International Corporation
High rate resist polymerization apparatus
US4357364A
(en)
*
1981-04-27
1982-11-02
Rockwell International Corporation
High rate resist polymerization method
JPS57198631A
(en)
*
1981-05-29
1982-12-06
Ibm
Exposing method and device
JPS58170037A
(en)
*
1982-03-31
1983-10-06
Toshiba Corp
Method and device for cutting wirings
US4519876A
(en)
*
1984-06-28
1985-05-28
Thermo Electron Corporation
Electrolytic deposition of metals on laser-conditioned surfaces
US4743463A
(en)
*
1986-02-21
1988-05-10
Eastman Kodak Company
Method for forming patterns on a substrate or support
US4752455A
(en)
*
1986-05-27
1988-06-21
Kms Fusion, Inc.
Pulsed laser microfabrication
US4970196A
(en)
*
1987-01-15
1990-11-13
The Johns Hopkins University
Method and apparatus for the thin film deposition of materials with a high power pulsed laser
US5062939A
(en)
*
1990-03-29
1991-11-05
The United States Of America As Represented By The Secretary Of The Navy
Selective metallization of carbonyl-containing polymer films
DE4034834C2
(en)
*
1990-11-02
1995-03-23
Heraeus Noblelight Gmbh
Process for the production of metallic layers on substrates and use of the layers
US5173441A
(en)
*
1991-02-08
1992-12-22
Micron Technology, Inc.
Laser ablation deposition process for semiconductor manufacture
US5348776A
(en)
*
1991-04-23
1994-09-20
Osaka Gas Company Limited
Method of producing interconnectors for solid oxide electrolyte fuel cells
EP0536431B1
(en)
*
1991-10-07
1994-11-30
Siemens Aktiengesellschaft
Method for working a thin film device by laser
DE4232373A1
(en)
*
1992-09-03
1994-03-10
Deutsche Forsch Luft Raumfahrt
Structural semiconductor layer deposition method – heating applied film using laser beam, to transfer the film material to surface of substrate
DE4430390C2
(en)
*
1993-09-09
1995-08-10
Krone Ag
Process for the production of structured metallizations on surfaces
US5567336A
(en)
*
1994-10-24
1996-10-22
Matsushita Electric Industrial Co., Ltd.
Laser ablation forward metal deposition with electrostatic assisted bonding
US5935462A
(en)
*
1994-10-24
1999-08-10
Matsushita Electric Industrial Co., Ltd.
Repair of metal lines by electrostatically assisted laser ablative deposition
US5683601A
(en)
*
1994-10-24
1997-11-04
Panasonic Technologies, Inc.
Laser ablation forward metal deposition with electrostatic assisted bonding
EP0732221B1
(en)
*
1995-03-16
1999-01-27
Minnesota Mining And Manufacturing Company
Black metal thermally imageable transparency elements
DE19517625A1
(en)
*
1995-05-13
1996-11-14
Budenheim Rud A Oetker Chemie
Laser printing esp. on glass or plastic substrate
US6211080B1
(en)
1996-10-30
2001-04-03
Matsushita Electric Industrial Co., Ltd.
Repair of dielectric-coated electrode or circuit defects
DE69704698T2
(en)
*
1996-12-27
2002-01-31
Omron Tateisi Electronics Co
Method of labeling an object that uses a laser beam
US6180912B1
(en)
1998-03-31
2001-01-30
Matsushita Electric Industrial Co., Ltd.
Fan-out beams for repairing an open defect
US6060127A
(en)
*
1998-03-31
2000-05-09
Matsushita Electric Industrial Co., Ltd.
Mechanically restricted laser deposition
KR20040039494A
(en)
*
2001-10-09
2004-05-10
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Method of manufacturing an electronic component and electronic component obtained by means of said method
TWI419233B
(en)
*
2008-04-09
2013-12-11
Ind Tech Res Inst
Method for manufacturing a patterned metal layer
EP2731126A1
(en)
2012-11-09
2014-05-14
Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO
Method for bonding bare chip dies
CN109848569A
(en)
*
2017-11-29
2019-06-07
北京自动化控制设备研究所
A kind of laser etching method of MEMS silicon structure
US11819943B1
(en)
*
2019-03-28
2023-11-21
Blue Origin Llc
Laser material fusion under vacuum, and associated systems and methods
1966
1966-07-22
GB
GB33047/66A
patent/GB1138084A/en
not_active
Expired
1967
1967-05-31
US
US642403A
patent/US3560258A/en
not_active
Expired – Lifetime
1967-07-20
NL
NL6710051A
patent/NL6710051A/xx
unknown
1967-07-22
ES
ES343349A
patent/ES343349A1/en
not_active
Expired
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2030145A1
(en)
*
1969-01-15
1970-10-30
Ibm
GB2125830A
(en)
*
1982-08-24
1984-03-14
Mason Vactron Limited
Vacuum deposition apparatus and method
Also Published As
Publication number
Publication date
NL6710051A
(en)
1968-01-23
US3560258A
(en)
1971-02-02
ES343349A1
(en)
1968-09-01
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