GB1205320A – Improvements in or relating to the production of semiconductor devices
– Google Patents
GB1205320A – Improvements in or relating to the production of semiconductor devices
– Google Patents
Improvements in or relating to the production of semiconductor devices
Info
Publication number
GB1205320A
GB1205320A
GB5075268A
GB5075268A
GB1205320A
GB 1205320 A
GB1205320 A
GB 1205320A
GB 5075268 A
GB5075268 A
GB 5075268A
GB 5075268 A
GB5075268 A
GB 5075268A
GB 1205320 A
GB1205320 A
GB 1205320A
Authority
GB
United Kingdom
Prior art keywords
nitride
mesa
silicon
semi
layer
Prior art date
1967-10-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5075268A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-10-28
Filing date
1968-10-25
Publication date
1970-09-16
1968-10-25
Application filed by Nippon Telegraph and Telephone Corp
filed
Critical
Nippon Telegraph and Telephone Corp
1970-09-16
Publication of GB1205320A
publication
Critical
patent/GB1205320A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
6
238000004519
manufacturing process
Methods
0.000
title
abstract
2
238000000034
method
Methods
0.000
abstract
4
150000004767
nitrides
Chemical class
0.000
abstract
4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
3
229910052710
silicon
Inorganic materials
0.000
abstract
3
239000010703
silicon
Substances
0.000
abstract
3
229910052581
Si3N4
Inorganic materials
0.000
abstract
2
239000013078
crystal
Substances
0.000
abstract
2
HQVNEWCFYHHQES-UHFFFAOYSA-N
silicon nitride
Chemical compound
N12[Si]34N5[Si]62N3[Si]51N64
HQVNEWCFYHHQES-UHFFFAOYSA-N
0.000
abstract
2
JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound
[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
abstract
1
229910001218
Gallium arsenide
Inorganic materials
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
239000007789
gas
Substances
0.000
abstract
1
229910052732
germanium
Inorganic materials
0.000
abstract
1
GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound
[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
229910052751
metal
Inorganic materials
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
230000003647
oxidation
Effects
0.000
abstract
1
238000007254
oxidation reaction
Methods
0.000
abstract
1
230000001590
oxidative effect
Effects
0.000
abstract
1
MZLGASXMSKOWSE-UHFFFAOYSA-N
tantalum nitride
Chemical compound
[Ta]#N
MZLGASXMSKOWSE-UHFFFAOYSA-N
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/76—Making of isolation regions between components
H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1,205,320. Semi-conductor devices. NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP. 25 Oct., 1968 [28 Oct., 1967], No. 50752/68. Heading H1K. A method of producing a mesa type semiconductor element structure, wherein the sides of the mesa are covered with an insulating layer, comprises forming on that part of the surface of the semi-conductor element where the mesa is required a layer 3 of nitride and then oxidizing the remainder of the surface of the element to a depth H such that after the nitride layer 3 is removed to expose the semi-conductor surface the oxide layer 4 still remains over the rest of the surface to leave a mesa of height h whose side walls are protected by the oxide. A PN junction can then be formed in this mesa and a metal contact deposited on its top surface. The semi-conductor material may be silicon, germanium or gallium arsenide, and the nitride layer may be silicon nitride or tantalum nitride. In a further embodiment of the method, where accurately formed hollows are required in a silicon crystal surface, a silicon nitride mask is applied on the surface and apertures formed where the hollows are required. The silicon is then oxidized over these exposed regions into the crystal and then selectively removed to leave the required hollows. The nitride layers are grown from gases and the oxide layers by oxidation, and both are removed by etching processes. The method may be applied in the production of diodes, or transistors of the planar type
GB5075268A
1967-10-28
1968-10-25
Improvements in or relating to the production of semiconductor devices
Expired
GB1205320A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP6900167
1967-10-28
Publications (1)
Publication Number
Publication Date
GB1205320A
true
GB1205320A
(en)
1970-09-16
Family
ID=13389909
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB5075268A
Expired
GB1205320A
(en)
1967-10-28
1968-10-25
Improvements in or relating to the production of semiconductor devices
Country Status (4)
Country
Link
DE
(1)
DE1805707B2
(en)
FR
(1)
FR1594694A
(en)
GB
(1)
GB1205320A
(en)
NL
(1)
NL6815286A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2449332A1
(en)
*
1979-02-13
1980-09-12
Itt
METHOD OF PROTECTING CONTACT AREAS ON SEMICONDUCTOR DEVICES
Families Citing this family (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL159817B
(en)
*
1966-10-05
1979-03-15
Philips Nv
PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE.
GB1332931A
(en)
*
1970-01-15
1973-10-10
Mullard Ltd
Methods of manufacturing a semiconductor device
US4002511A
(en)
*
1975-04-16
1977-01-11
Ibm Corporation
Method for forming masks comprising silicon nitride and novel mask structures produced thereby
IT1080473B
(en)
*
1977-07-25
1985-05-16
Ducati Elettrotecnica Spa
AUTORIGENE RANTE ELECTRIC CONDENSER WITH MIXED DIELECTRIC
JPS5955052A
(en)
*
1982-09-24
1984-03-29
Hitachi Ltd
Semiconductor integrated circuit device and manufacture thereof
DE3312076A1
(en)
*
1983-04-02
1984-10-04
O.D.A.M. – Office de Distribution d’Appareils Médicaux, Wissembourg
HIGH ENERGY DENSITY CAPACITOR AND METHOD FOR PRODUCING THE SAME
1968
1968-10-25
GB
GB5075268A
patent/GB1205320A/en
not_active
Expired
1968-10-25
NL
NL6815286A
patent/NL6815286A/xx
unknown
1968-10-28
FR
FR1594694D
patent/FR1594694A/fr
not_active
Expired
1968-10-28
DE
DE19681805707
patent/DE1805707B2/en
active
Pending
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2449332A1
(en)
*
1979-02-13
1980-09-12
Itt
METHOD OF PROTECTING CONTACT AREAS ON SEMICONDUCTOR DEVICES
Also Published As
Publication number
Publication date
FR1594694A
(en)
1970-07-17
NL6815286A
(en)
1969-05-01
DE1805707B2
(en)
1972-03-16
DE1805707A1
(en)
1969-08-21
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Legal Events
Date
Code
Title
Description
1971-01-27
PS
Patent sealed
1985-11-13
732
Registration of transactions, instruments or events in the register (sect. 32/1977)
1988-12-14
PE20
Patent expired after termination of 20 years
