GB1222144A – Improved electrical switching means
– Google Patents
GB1222144A – Improved electrical switching means
– Google Patents
Improved electrical switching means
Info
Publication number
GB1222144A
GB1222144A
GB30258/68A
GB3025868A
GB1222144A
GB 1222144 A
GB1222144 A
GB 1222144A
GB 30258/68 A
GB30258/68 A
GB 30258/68A
GB 3025868 A
GB3025868 A
GB 3025868A
GB 1222144 A
GB1222144 A
GB 1222144A
Authority
GB
United Kingdom
Prior art keywords
bias
electrode
ignition electrode
ignition
cathode
Prior art date
1967-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30258/68A
Inventor
Per Svedberg
Bengt-Arne Vedin
Karl Malen
Carl Ingvar Boksjo
Karl Erik Olsson
Erich Spicar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-06-30
Filing date
1968-06-25
Publication date
1971-02-10
1968-06-25
Application filed by ASEA AB, Allmanna Svenska Elektriska AB
filed
Critical
ASEA AB
1971-02-10
Publication of GB1222144A
publication
Critical
patent/GB1222144A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
238000010304
firing
Methods
0.000
abstract
2
238000005422
blasting
Methods
0.000
abstract
1
230000000903
blocking effect
Effects
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/73—Bipolar junction transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Abstract
1,222,144. S.C.Rs. ALLMANNA SVENSKA ELEKTRISKA A.B. 25 June, 1968 [30 June, 1967], No. 30258/68. Heading HlK. An S.C.R. is provided with an ignition electrode and at least one bias electrode on one of its base layers, the bias electrode being supplied with a voltage such that the junction between the said base layer and the adjacent emitter layer is reverse biased at least during the blocking interval of the device. As shown, Fig. 2, an S.C.R. has a cathode electrode 6 and a central ignition electrode 97 contacting the adjacent base layer 4 which is also provided with three bias electrodes 91, 92, 93 which are connected together and biased negatively with respect to the cathode by source 12. The device is fired by applying a positive voltage to the ignition electrode 97. In a second embodiment, Fig. 3 (not shown), six bias electrodes are provided and each is connected to the central ignition electrode by means of a diode. The bias and ignition voltages are applied directly between the ignition electrode and the cathode and the diodes are poled so that negative bias applied to the ignition electrode is also applied to the bias electrodes but a positive firing voltage applied to the ignition electrode is blocked from the bias electrodes. The S.C.R. and diodes may be mounted in a single housing. In another embodiment, Fig. 4 (not shown), two bias electrodes and an ignition electrode are arranged round the periphery of the cathode region which is provided with a small notch to accommodate the ignition electrode and larger semicircular recesses to accommodate the bias electrodes. The ignition and bias electrodes are connected directly together and their arrangement relative to the cathode region ensures that when a positive firing voltage is applied conduction is initiated only at the point adjacent to the ignition electrode. The ignition electrode may also be positioned at the centre of the cathode. In a further embodiment, Fig. 5 (not shown), the ignition electrode is arranged to one side of the cathode region and a single, strip-like bias electrode surrounds the majority of the remainder of the cathode region. The bias electrode may be provided with an individual bias voltage source or may be connected directly to the ignition electrode in which case the thickness of the base layer between the bias electrode and the cathode is reduced by etching or blasting to ensure that conduction is initiated only at the ignition electrode.
GB30258/68A
1967-06-30
1968-06-25
Improved electrical switching means
Expired
GB1222144A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
SE9872/67*A
SE318654B
(en)
1967-06-30
1967-06-30
Publications (1)
Publication Number
Publication Date
GB1222144A
true
GB1222144A
(en)
1971-02-10
Family
ID=20277697
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB30258/68A
Expired
GB1222144A
(en)
1967-06-30
1968-06-25
Improved electrical switching means
Country Status (7)
Country
Link
US
(1)
US3543105A
(en)
CH
(1)
CH485330A
(en)
DE
(1)
DE1764573A1
(en)
FR
(1)
FR1571811A
(en)
GB
(1)
GB1222144A
(en)
NL
(1)
NL6808706A
(en)
SE
(1)
SE318654B
(en)
Families Citing this family (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS541437B2
(en)
*
1973-04-18
1979-01-24
US4083063A
(en)
*
1973-10-09
1978-04-04
General Electric Company
Gate turnoff thyristor with a pilot scr
DE3172064D1
(en)
*
1981-01-26
1985-10-03
Landis & Gyr Ag
Electrolytic cell
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
BE623187A
(en)
*
1961-10-06
US3271587A
(en)
*
1962-11-13
1966-09-06
Texas Instruments Inc
Four-terminal semiconductor switch circuit
GB1095469A
(en)
*
1964-03-21
1967
1967-06-30
SE
SE9872/67*A
patent/SE318654B/xx
unknown
1968
1968-06-20
NL
NL6808706A
patent/NL6808706A/xx
unknown
1968-06-25
GB
GB30258/68A
patent/GB1222144A/en
not_active
Expired
1968-06-28
CH
CH995068A
patent/CH485330A/en
not_active
IP Right Cessation
1968-06-28
DE
DE19681764573
patent/DE1764573A1/en
active
Pending
1968-06-28
FR
FR1571811D
patent/FR1571811A/fr
not_active
Expired
1968-07-01
US
US741671A
patent/US3543105A/en
not_active
Expired – Lifetime
Also Published As
Publication number
Publication date
DE1764573A1
(en)
1971-08-26
NL6808706A
(en)
1968-12-31
US3543105A
(en)
1970-11-24
FR1571811A
(en)
1969-06-20
CH485330A
(en)
1970-01-31
SE318654B
(en)
1969-12-15
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