GB1229381A – – Google Patents
GB1229381A – – Google Patents
Info
Publication number
GB1229381A
GB1229381A
GB1229381DA
GB1229381A
GB 1229381 A
GB1229381 A
GB 1229381A
GB 1229381D A
GB1229381D A
GB 1229381DA
GB 1229381 A
GB1229381 A
GB 1229381A
Authority
GB
United Kingdom
Prior art keywords
layer
sept
semi
electrode
layers
Prior art date
1968-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-09-30
Filing date
1969-09-29
Publication date
1971-04-21
1969-09-29
Application filed
filed
Critical
1971-04-21
Publication of GB1229381A
publication
Critical
patent/GB1229381A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
229910018507
Al—Ni
Inorganic materials
0.000
abstract
2
239000004065
semiconductor
Substances
0.000
abstract
2
229910045601
alloy
Inorganic materials
0.000
abstract
1
239000000956
alloy
Substances
0.000
abstract
1
239000013078
crystal
Substances
0.000
abstract
1
239000011521
glass
Substances
0.000
abstract
1
WABPQHHGFIMREM-UHFFFAOYSA-N
lead(0)
Chemical compound
[Pb]
WABPQHHGFIMREM-UHFFFAOYSA-N
0.000
abstract
1
229910000679
solder
Inorganic materials
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, «first-level» interconnects; Manufacturing methods related thereto
H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
H01L2224/321—Disposition
H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/00—Stock material or miscellaneous articles
Y10T428/12—All metal or with adjacent metals
Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Y10T428/12528—Semiconductor component
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/00—Stock material or miscellaneous articles
Y10T428/12—All metal or with adjacent metals
Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Y10T428/12736—Al-base component
Y10T428/12743—Next to refractory [Group IVB, VB, or VIB] metal-base component
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/00—Stock material or miscellaneous articles
Y10T428/12—All metal or with adjacent metals
Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Y10T428/12771—Transition metal-base component
Y10T428/12861—Group VIII or IB metal-base component
Y10T428/12896—Ag-base component
Abstract
1,229,381. Semi-conductor devices. SIEMENS A.G. 29 Sept., 1969 [30 Sept., 1968], No. 47760/69. Heading H1K. An electrode for a semi-conductor device comprises a first layer 3 of Al-Ni alloy preferably containing 1-2% by weight of Ni, a second layer 4 of Ti and a third layer 5 of Ag. All three layers, or just the Al-Ni layer 3, may be vapour deposited, and in the latter case the layers 4 and 5 are deposited electrolytically. The device may be a planar Si Zener diode including a Podoped region forming a PN junction 2 with a P-type basic crystal 1. The device may be enclosed in a glass housing, the electrode being soldered to a Cu-coated lead wire by means of a solder plate comprising a Cu core coated on both sides with Sb-doped Au containing an addition of Sn.
GB1229381D
1968-09-30
1969-09-29
Expired
GB1229381A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE1789062A
DE1789062C3
(en)
1968-09-30
1968-09-30
Process for producing metal contact layers for semiconductor arrangements
Publications (1)
Publication Number
Publication Date
GB1229381A
true
GB1229381A
(en)
1971-04-21
Family
ID=5706784
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1229381D
Expired
GB1229381A
(en)
1968-09-30
1969-09-29
Country Status (9)
Country
Link
US
(1)
US3650826A
(en)
JP
(1)
JPS4831506B1
(en)
AT
(1)
AT303119B
(en)
CH
(1)
CH504101A
(en)
DE
(1)
DE1789062C3
(en)
FR
(1)
FR2032259A1
(en)
GB
(1)
GB1229381A
(en)
NL
(1)
NL6913039A
(en)
SE
(1)
SE340849B
(en)
Families Citing this family (11)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3872419A
(en)
*
1972-06-15
1975-03-18
Alexander J Groves
Electrical elements operable as thermisters, varisters, smoke and moisture detectors, and methods for making the same
US3922385A
(en)
*
1973-07-02
1975-11-25
Gen Motors Corp
Solderable multilayer contact for silicon semiconductor
US4293587A
(en)
*
1978-11-09
1981-10-06
Zilog, Inc.
Low resistance backside preparation for semiconductor integrated circuit chips
WO1982002457A1
(en)
*
1980-12-30
1982-07-22
Finn John B
Die attachment exhibiting enhanced quality and reliability
SE8306663L
(en)
*
1982-12-08
1984-06-09
Int Rectifier Corp
PROCEDURE FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
US4965173A
(en)
*
1982-12-08
1990-10-23
International Rectifier Corporation
Metallizing process and structure for semiconductor devices
DE3426200C2
(en)
*
1984-07-17
1994-02-10
Asea Brown Boveri
Bridging element
DE3426199C2
(en)
*
1984-07-17
1994-02-03
Asea Brown Boveri
Bridging element
NL8600021A
(en)
*
1986-01-08
1987-08-03
Philips Nv
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING METALIZATION TO A SEMICONDUCTOR BODY
US4921158A
(en)
1989-02-24
1990-05-01
General Instrument Corporation
Brazing material
US5008735A
(en)
*
1989-12-07
1991-04-16
General Instrument Corporation
Packaged diode for high temperature operation
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL298258A
(en)
*
1962-05-25
1900-01-01
GB1053069A
(en)
*
1963-06-28
US3465209A
(en)
*
1966-07-07
1969-09-02
Rca Corp
Semiconductor devices and methods of manufacture thereof
US3523223A
(en)
*
1967-11-01
1970-08-04
Texas Instruments Inc
Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
1968
1968-09-30
DE
DE1789062A
patent/DE1789062C3/en
not_active
Expired
1969
1969-08-26
NL
NL6913039A
patent/NL6913039A/xx
unknown
1969-09-26
US
US861355A
patent/US3650826A/en
not_active
Expired – Lifetime
1969-09-26
CH
CH1453669A
patent/CH504101A/en
not_active
IP Right Cessation
1969-09-29
GB
GB1229381D
patent/GB1229381A/en
not_active
Expired
1969-09-29
AT
AT919269A
patent/AT303119B/en
not_active
IP Right Cessation
1969-09-29
JP
JP44077010A
patent/JPS4831506B1/ja
active
Pending
1969-09-29
FR
FR6933103A
patent/FR2032259A1/fr
not_active
Withdrawn
1969-09-30
SE
SE13466/69A
patent/SE340849B/xx
unknown
Also Published As
Publication number
Publication date
CH504101A
(en)
1971-02-28
JPS4831506B1
(en)
1973-09-29
DE1789062B2
(en)
1978-03-30
AT303119B
(en)
1972-11-10
SE340849B
(en)
1971-12-06
DE1789062C3
(en)
1978-11-30
NL6913039A
(en)
1970-04-01
FR2032259A1
(en)
1970-11-27
US3650826A
(en)
1972-03-21
DE1789062A1
(en)
1972-01-05
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Legal Events
Date
Code
Title
Description
1971-09-02
PS
Patent sealed [section 19, patents act 1949]
1976-04-28
PLNP
Patent lapsed through nonpayment of renewal fees
