GB1247214A – Improvements relating to the formation of single crystals
– Google Patents
GB1247214A – Improvements relating to the formation of single crystals
– Google Patents
Improvements relating to the formation of single crystals
Info
Publication number
GB1247214A
GB1247214A
GB0531/69A
GB153169A
GB1247214A
GB 1247214 A
GB1247214 A
GB 1247214A
GB 0531/69 A
GB0531/69 A
GB 0531/69A
GB 153169 A
GB153169 A
GB 153169A
GB 1247214 A
GB1247214 A
GB 1247214A
Authority
GB
United Kingdom
Prior art keywords
maintaining
crystal
temperature
jan
recess
Prior art date
1968-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB0531/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-01-15
Filing date
1969-01-10
Publication date
1971-09-22
1969-01-10
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1971-09-22
Publication of GB1247214A
publication
Critical
patent/GB1247214A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/085—Isolated-integrated
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/15—Silicon on sapphire SOS
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/152—Single crystal on amorphous substrate
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/17—Vapor-liquid-solid
Abstract
1,247,214. Forming single crystals. INTERNATIONAL BUSINESS MACHINES CORP. 10 Jan., 1969 [15 Jan., 1968], No. 1531/69. Heading B1S. [Also in Division H1] A single crystal is formed in a recess in a non-monocrystalline substrate by placing a body of a first material in the recess and melting it under an inert atmosphere, bring- ing an atmosphere containing a second material into contact with the body to cause absorption of the second material into the body while maintaining the body above the eutectic temperature of the two materials and also maintaining a sufficient temperature gradient across the body to cause nucleation at only a single point on the body, the higher tempera – ture of the gradient being at the exposed part of the body, and maintaining these conditions until the desired height of single crystal is obtained, the crystal being formed from the second material or a compound or mixture thereof with the first material. Nucleation may be initiated by maintaining the body at a first predetermined temperature until its melt becomes supersaturated with the second material with respect to some lower predetermined temperature, whereupon the body is lowered in temperature to this point. The first material may be gold, boron, gallium or indium and the second material silicon, germanium, phosphorus, arsenic or antimony obtained from the vapour of a hydride or halide. Specified substrates are quartz or a ceramic of metal oxide(s). If the crystals are of a semiconductor material they may each form part of a semiconductor device, e.g. each crystal may have a monolithic integrated circuit formed in it.
GB0531/69A
1968-01-15
1969-01-10
Improvements relating to the formation of single crystals
Expired
GB1247214A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US69777068A
1968-01-15
1968-01-15
Publications (1)
Publication Number
Publication Date
GB1247214A
true
GB1247214A
(en)
1971-09-22
Family
ID=24802468
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB0531/69A
Expired
GB1247214A
(en)
1968-01-15
1969-01-10
Improvements relating to the formation of single crystals
Country Status (4)
Country
Link
US
(1)
US3580732A
(en)
DE
(1)
DE1901752C3
(en)
FR
(1)
FR1601583A
(en)
GB
(1)
GB1247214A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2362754A
(en)
*
2000-05-25
2001-11-28
Nanogate Ltd
A method of growing single crystals
Families Citing this family (13)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3789276A
(en)
*
1968-07-15
1974-01-29
Texas Instruments Inc
Multilayer microelectronic circuitry techniques
US4132571A
(en)
*
1977-02-03
1979-01-02
International Business Machines Corporation
Growth of polycrystalline semiconductor film with intermetallic nucleating layer
FR2407892A1
(en)
*
1977-11-04
1979-06-01
Rhone Poulenc Ind
SILICON MANUFACTURING PROCESS FOR PHOTOVOLTAIC CONVERSION
JPH0782996B2
(en)
*
1986-03-28
1995-09-06
キヤノン株式会社
Crystal formation method
JP2670442B2
(en)
*
1986-03-31
1997-10-29
キヤノン株式会社
Crystal formation method
FR2658839B1
(en)
*
1990-02-23
1997-06-20
Thomson Csf
METHOD FOR CONTROLLED GROWTH OF ACICULAR CRYSTALS AND APPLICATION TO THE PRODUCTION OF POINTED MICROCATHODES.
JP2697474B2
(en)
*
1992-04-30
1998-01-14
松下電器産業株式会社
Manufacturing method of microstructure
US5264722A
(en)
*
1992-06-12
1993-11-23
The United States Of America As Represented By The Secretary Of The Navy
Nanochannel glass matrix used in making mesoscopic structures
US5479874A
(en)
*
1993-09-29
1996-01-02
General Electric Company
CVD diamond production using preheating
US5431127A
(en)
*
1994-10-14
1995-07-11
Texas Instruments Incorporated
Process for producing semiconductor spheres
DE59607177D1
(en)
*
1995-07-28
2001-08-02
Forschungsverbund Berlin Ev
METHOD FOR PRODUCING CRYSTALLINE LAYERS
US6882051B2
(en)
*
2001-03-30
2005-04-19
The Regents Of The University Of California
Nanowires, nanostructures and devices fabricated therefrom
US7776152B2
(en)
*
2006-11-01
2010-08-17
Raytheon Company
Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
1968
1968-01-15
US
US697770A
patent/US3580732A/en
not_active
Expired – Lifetime
1968-12-13
FR
FR1601583D
patent/FR1601583A/fr
not_active
Expired
1969
1969-01-10
GB
GB0531/69A
patent/GB1247214A/en
not_active
Expired
1969-01-15
DE
DE1901752A
patent/DE1901752C3/en
not_active
Expired
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2362754A
(en)
*
2000-05-25
2001-11-28
Nanogate Ltd
A method of growing single crystals
Also Published As
Publication number
Publication date
DE1901752C3
(en)
1978-04-20
FR1601583A
(en)
1970-08-31
DE1901752B2
(en)
1977-08-18
US3580732A
(en)
1971-05-25
DE1901752A1
(en)
1969-09-04
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