GB1295530A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1295530A – – Google Patents

Info

Publication number
GB1295530A

GB1295530A

GB1295530DA
GB1295530A
GB 1295530 A
GB1295530 A
GB 1295530A

GB 1295530D A
GB1295530D A
GB 1295530DA
GB 1295530 A
GB1295530 A
GB 1295530A
Authority
GB
United Kingdom
Prior art keywords
layer
type
contact
sio
june
Prior art date
1969-06-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-06-23
Filing date
1970-06-23
Publication date
1972-11-08

1970-06-23
Application filed
filed
Critical

1972-11-08
Publication of GB1295530A
publication
Critical
patent/GB1295530A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/268

H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers

H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Abstract

1295530 Electroluminescence WESTERN ELECTRIC CO Inc 23 June 1970 [23 June 1969] 30336/70 Heading C4S [Also in Division H1] A GaP electroluminescent device includes a diode with two major faces parallel to P-N junction and electrical contacts on same, one comprising an SiO 2 layer 23 covering at least 75% but not all the major surface and a metal layer 25, preferably gold with 1 to 4% Si when the one major face is N-type, contacting substantially the remainder of the surface and extending over substantially all the SiO 2 . A support 27 is bonded to the diode and has a metallized portion 26 in contact with the metal layer. Preferably the other contact is Zn-Au alloy. The effects of contact optical absorption are considered, Fig. 1 (not shown) illustrating optical output efficiency as a function of absorbing contact area, and free carrier concentrations instanced are 5 x 107 to 4 Î 1018, e.g. 8 x 1017, and resistivities 0À07 to 0À10 # cm. for N-type and 0À08 to 0À12 # cm. for P-type. The design is stated to reduce optical loss and electric current nonuniformity without significantly increasing thermal impedance. Reference is made to Zn, Cd, Be, Mg, Ge dopants for P-type contacts and S, Se, Te, Si and Sn for N-type contacts, butane stated as unacceptable in practice. A 0À2 Á SiO 2 layer (23) (Figs. 2A to 2E, not shown) may be obtained by thermal decomposition of ethyl silicate at 650‹ C., or from evaporation of quartz by electrons, holes (24) etched, Au -2% Si layer (25) evaporated and alloyed, grooves (26) scribed, and the devices separated by sawing or cleaving, preferably assisted by etching which effects rounding the top edges to enhance optical efficiency. Layer 25 is bonded to circuit portion (26) of a printed circuit board. The P-side contact is a Au-Zn wire (28).

GB1295530D
1969-06-23
1970-06-23

Expired

GB1295530A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US83538469A

1969-06-23
1969-06-23

Publications (1)

Publication Number
Publication Date

GB1295530A
true

GB1295530A
(en)

1972-11-08

Family
ID=25269375
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB1295530D
Expired

GB1295530A
(en)

1969-06-23
1970-06-23

Country Status (7)

Country
Link

JP
(1)

JPS4940395B1
(en)

BE
(1)

BE752274A
(en)

DE
(1)

DE2031021A1
(en)

FR
(1)

FR2053934A5
(en)

GB
(1)

GB1295530A
(en)

NL
(1)

NL7009114A
(en)

SE
(1)

SE352510B
(en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2402717A1
(en)

1973-01-22
1974-08-08
Tokyo Shibaura Electric Co

LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING IT

JPH0671419U
(en)

1993-03-22
1994-10-07
大塚包装工業株式会社

Partition of packaging box

1970

1970-06-15
SE
SE827370A
patent/SE352510B/xx
unknown

1970-06-19
BE
BE752274D
patent/BE752274A/en
unknown

1970-06-22
JP
JP5358170A
patent/JPS4940395B1/ja
active
Pending

1970-06-22
NL
NL7009114A
patent/NL7009114A/xx
unknown

1970-06-22
FR
FR7022942A
patent/FR2053934A5/fr
not_active
Expired

1970-06-23
GB
GB1295530D
patent/GB1295530A/en
not_active
Expired

1970-06-23
DE
DE19702031021
patent/DE2031021A1/en
active
Pending

Also Published As

Publication number
Publication date

FR2053934A5
(en)

1971-04-16

BE752274A
(en)

1970-12-01

DE2031021A1
(en)

1971-02-04

SE352510B
(en)

1972-12-27

JPS4940395B1
(en)

1974-11-01

NL7009114A
(en)

1970-12-28

Información de contacto