GB1301345A – – Google Patents
GB1301345A – – Google Patents
Info
Publication number
GB1301345A
GB1301345A
GB1301345DA
GB1301345A
GB 1301345 A
GB1301345 A
GB 1301345A
GB 1301345D A
GB1301345D A
GB 1301345DA
GB 1301345 A
GB1301345 A
GB 1301345A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
island
forming
substrate
Prior art date
1969-04-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-04-18
Filing date
1970-04-15
Publication date
1972-12-29
1970-04-15
Application filed
filed
Critical
1972-12-29
Publication of GB1301345A
publication
Critical
patent/GB1301345A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
H01L27/0821—Combination of lateral and vertical transistors only
Abstract
1301345 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 April 1970 [18 April 1969] 17963/70 Heading H1K A semi-conductor device comprises a substrate region 4, 5 of one conductivity type, an island region 6, 7 of the opposite conductivity type, surrounded by region 4, 5, and forming a collector region, a first region 9 of the one conductivity type within the island region and forming a base region, a region 10 of the opposite conductivity type forming an emitter region and a second region 16 of the one conductivity type, within the island region 6, 7 and extending laterally around the first region 9. The island region may be formed from an epitaxial layer 6 and include a buried region 7. The second region 16 prevents minority carriers produced in the island region, by temporary forward biasing of the collector-base junction 15, from reaching the substrate region, and hence reduces the effect of parasitic lateral transistor 9, 6, 5. The spacing of regions 9 and 16 is required to be greater than the width of the depletion layer of the junction 5 but less than the diffusion length of the minority carriers in region 6. Efficiency may be improved by connecting region 16 directly to the island region 6 by contact 11. In an alternative embodiment, resistors may be formed in the substrate outside region 4, 5 and be connected to the aforementioned regions. The device may be of germanium, silicon or a III-V compound with boron and phosphorus doping, using aluminium electrodes and oxide or nitride insulating layers on surface 2.
GB1301345D
1969-04-18
1970-04-15
Expired
GB1301345A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
NL6906105.A
NL161923C
(en)
1969-04-18
1969-04-18
SEMICONDUCTOR DEVICE.
Publications (1)
Publication Number
Publication Date
GB1301345A
true
GB1301345A
(en)
1972-12-29
Family
ID=19806745
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1301345D
Expired
GB1301345A
(en)
1969-04-18
1970-04-15
Country Status (10)
Country
Link
US
(1)
US3676714A
(en)
JP
(1)
JPS4938070B1
(en)
BE
(1)
BE749078A
(en)
CA
(1)
CA923628A
(en)
CH
(1)
CH508280A
(en)
DE
(1)
DE2016760C3
(en)
FR
(1)
FR2039285B1
(en)
GB
(1)
GB1301345A
(en)
NL
(1)
NL161923C
(en)
SE
(1)
SE363702B
(en)
Families Citing this family (22)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CA997481A
(en)
*
1972-12-29
1976-09-21
International Business Machines Corporation
Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing
JPS5017180A
(en)
*
1973-06-13
1975-02-22
US3931634A
(en)
*
1973-06-14
1976-01-06
Rca Corporation
Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
US3916431A
(en)
*
1974-06-21
1975-10-28
Rca Corp
Bipolar integrated circuit transistor with lightly doped subcollector core
JPS51163682U
(en)
*
1976-05-10
1976-12-27
NL7800407A
(en)
*
1977-11-17
1979-05-21
Philips Nv
INTEGRATED LOGICAL CIRCUIT.
NL7712649A
(en)
*
1977-11-17
1979-05-21
Philips Nv
INTEGRATED CIRCUIT.
DE2835930C2
(en)
*
1978-08-17
1986-07-17
Siemens AG, 1000 Berlin und 8000 München
Monolithically integrated semiconductor circuit arrangement with at least one lateral transistor
FR2492165A1
(en)
*
1980-05-14
1982-04-16
Thomson Csf
DEVICE FOR PROTECTION AGAINST LEAKAGE CURRENTS IN INTEGRATED CIRCUITS
JPS57162365A
(en)
*
1981-03-30
1982-10-06
Toshiba Corp
Semiconductor device
US4486770A
(en)
*
1981-04-27
1984-12-04
General Motors Corporation
Isolated integrated circuit transistor with transient protection
US4496849A
(en)
*
1982-02-22
1985-01-29
General Motors Corporation
Power transistor protection from substrate injection
FR2525818A1
(en)
*
1982-04-23
1983-10-28
Thomson Csf
Saturation detection NPN transistor for logic circuit – has P=type annular zone surrounding base zone and supplementary metallisation
JPH0654777B2
(en)
*
1985-02-12
1994-07-20
キヤノン株式会社
Circuit with lateral transistor
US4710793A
(en)
*
1985-09-04
1987-12-01
Motorola, Inc.
Voltage comparator with hysteresis
JPS6288137U
(en)
*
1985-11-20
1987-06-05
EP0378439B1
(en)
*
1989-01-13
1995-01-04
Canon Kabushiki Kaisha
Recording head
US5066869A
(en)
*
1990-04-09
1991-11-19
Unitrode Corporation
Reset circuit with PNP saturation detector
DE4032831C2
(en)
*
1990-10-16
1996-07-18
Siemens Ag
Transistor arrangement for bipolar integrated semiconductor circuits
JPH08504297A
(en)
*
1992-03-10
1996-05-07
アナログ・ディバイセス・インコーポレーテッド
Circuit structure for integrated circuit protection biasing
US6548878B1
(en)
1998-02-05
2003-04-15
Integration Associates, Inc.
Method for producing a thin distributed photodiode structure
US7217988B2
(en)
*
2004-06-04
2007-05-15
International Business Machines Corporation
Bipolar transistor with isolation and direct contacts
Family Cites Families (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL261720A
(en)
*
1960-03-04
US3177414A
(en)
*
1961-07-26
1965-04-06
Nippon Electric Co
Device comprising a plurality of transistors
NL293292A
(en)
*
1962-06-11
NL302804A
(en)
*
1962-08-23
1900-01-01
GB1030050A
(en)
*
1963-11-13
1966-05-18
Motorola Inc
Punchthrough breakdown rectifier
FR1475201A
(en)
*
1965-04-07
1967-03-31
Itt
Flat semiconductor device
US3395320A
(en)
*
1965-08-25
1968-07-30
Bell Telephone Labor Inc
Isolation technique for integrated circuit structure
FR1510057A
(en)
*
1966-12-06
1968-01-19
Csf
Complementary integrated npn and pnp transistors with isolated collectors
1969
1969-04-18
NL
NL6906105.A
patent/NL161923C/en
not_active
IP Right Cessation
1970
1970-04-01
US
US24558A
patent/US3676714A/en
not_active
Expired – Lifetime
1970-04-08
DE
DE2016760A
patent/DE2016760C3/en
not_active
Expired
1970-04-13
CA
CA079902A
patent/CA923628A/en
not_active
Expired
1970-04-15
JP
JP45031670A
patent/JPS4938070B1/ja
active
Pending
1970-04-15
CH
CH559570A
patent/CH508280A/en
not_active
IP Right Cessation
1970-04-15
GB
GB1301345D
patent/GB1301345A/en
not_active
Expired
1970-04-15
SE
SE05144/70A
patent/SE363702B/xx
unknown
1970-04-16
BE
BE749078D
patent/BE749078A/en
unknown
1970-04-20
FR
FR7014222A
patent/FR2039285B1/fr
not_active
Expired
Also Published As
Publication number
Publication date
NL161923C
(en)
1980-03-17
DE2016760B2
(en)
1978-12-07
JPS4938070B1
(en)
1974-10-15
SE363702B
(en)
1974-01-28
CA923628A
(en)
1973-03-27
FR2039285A1
(en)
1971-01-15
DE2016760C3
(en)
1982-09-23
US3676714A
(en)
1972-07-11
DE2016760A1
(en)
1970-11-05
BE749078A
(en)
1970-10-16
FR2039285B1
(en)
1975-03-07
CH508280A
(en)
1971-05-31
NL6906105A
(en)
1970-10-20
NL161923B
(en)
1979-10-15
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Legal Events
Date
Code
Title
Description
1973-05-09
PS
Patent sealed [section 19, patents act 1949]
1989-12-13
PCNP
Patent ceased through non-payment of renewal fee
