GB1310868A – Semiconductor device
– Google Patents
GB1310868A – Semiconductor device
– Google Patents
Semiconductor device
Info
Publication number
GB1310868A
GB1310868A
GB4166071A
GB4166071A
GB1310868A
GB 1310868 A
GB1310868 A
GB 1310868A
GB 4166071 A
GB4166071 A
GB 4166071A
GB 4166071 A
GB4166071 A
GB 4166071A
GB 1310868 A
GB1310868 A
GB 1310868A
Authority
GB
United Kingdom
Prior art keywords
thick
regions
electrodes
insulation
thin
Prior art date
1970-09-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4166071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-09-29
Filing date
1971-09-07
Publication date
1973-03-21
1971-09-07
Application filed by NCR Corp, National Cash Register Co
filed
Critical
NCR Corp
1973-03-21
Publication of GB1310868A
publication
Critical
patent/GB1310868A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/762—Charge transfer devices
H01L29/765—Charge-coupled devices
H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
H01L29/76866—Surface Channel CCD
H01L29/76875—Two-Phase CCD
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L29/42312—Gate electrodes for field effect devices
H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
Abstract
1310868 Semi-conductor devices NATIONAL CASH REGISTER CO 7 Sept 1971 [29 Sept 1970] 41660/71 Heading H1K A charge coupled device consists of a semiductor substrate and a layer of insulation on one face having a series of alternately thick and thin regions between minority carrier injection and detection locations. The transfer electrodes, each consisting of a metal layer overlying adjacent thick and thin regions form two alternating groups supplied with oppositely phased pulse waveforms. As shown, Fig. 1, the series of regions is disposed within an etched channel in a much thicker layer 14 of silica, on which the conductive connections to the electrodes are located. The minority carrier injection may be effected, as shown, by an avalanche device consisting of a metal layer on thin insulation 35, by an electron beam, or by a PN or Schottky barrier on the N-type silicon substrate. Transferred minority carriers can also be detected by such a barrier. The thin regions under the transfer electrodes may be 800-1000 Š thick and the thick regions 100-500 Š thicker. In operation the pulses applied to the two groups of electrodes are of the same magnitude. Backward movement of the carriers is avoided because on account of the greater thickness of insulation the potential well beneath the leading edge of each transfer electrode is always shallower than that at the trailing edge.
GB4166071A
1970-09-29
1971-09-07
Semiconductor device
Expired
GB1310868A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US7645370A
1970-09-29
1970-09-29
Publications (1)
Publication Number
Publication Date
GB1310868A
true
GB1310868A
(en)
1973-03-21
Family
ID=22132121
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4166071A
Expired
GB1310868A
(en)
1970-09-29
1971-09-07
Semiconductor device
Country Status (9)
Country
Link
AU
(1)
AU464863B2
(en)
BE
(1)
BE773210A
(en)
CH
(1)
CH539922A
(en)
DE
(1)
DE2146891A1
(en)
ES
(1)
ES395374A1
(en)
FR
(1)
FR2108053B1
(en)
GB
(1)
GB1310868A
(en)
NL
(1)
NL7113199A
(en)
ZA
(1)
ZA715975B
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2190540A
(en)
*
1986-05-13
1987-11-18
Mitsubishi Electric Corp
Solid state image sensor
1971
1971-09-07
GB
GB4166071A
patent/GB1310868A/en
not_active
Expired
1971-09-07
ZA
ZA715975A
patent/ZA715975B/en
unknown
1971-09-13
AU
AU33375/71A
patent/AU464863B2/en
not_active
Expired
1971-09-17
CH
CH1358271A
patent/CH539922A/en
not_active
IP Right Cessation
1971-09-20
DE
DE19712146891
patent/DE2146891A1/en
active
Pending
1971-09-23
ES
ES395374A
patent/ES395374A1/en
not_active
Expired
1971-09-24
NL
NL7113199A
patent/NL7113199A/xx
unknown
1971-09-27
FR
FR7134590A
patent/FR2108053B1/fr
not_active
Expired
1971-09-28
BE
BE773210A
patent/BE773210A/en
unknown
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2190540A
(en)
*
1986-05-13
1987-11-18
Mitsubishi Electric Corp
Solid state image sensor
US4760273A
(en)
*
1986-05-13
1988-07-26
Mitsubishi Denki Kabushiki Kaisha
Solid-state image sensor with groove-situated transfer elements
GB2190540B
(en)
*
1986-05-13
1990-02-21
Mitsubishi Electric Corp
Solid-state image sensor
Also Published As
Publication number
Publication date
DE2146891A1
(en)
1972-04-06
NL7113199A
(en)
1972-04-04
BE773210A
(en)
1972-01-17
FR2108053A1
(en)
1972-05-12
CH539922A
(en)
1973-07-31
FR2108053B1
(en)
1977-10-21
AU3337571A
(en)
1973-03-22
AU464863B2
(en)
1975-09-11
ES395374A1
(en)
1975-06-16
ZA715975B
(en)
1972-05-31
Similar Documents
Publication
Publication Date
Title
CA1073551A
(en)
1980-03-11
Monolithic semiconductor apparatus adapted for sequential charge transfer
GB1369606A
(en)
1974-10-09
Charge-coupled semiconductor device
US5438215A
(en)
1995-08-01
Power MOSFET
US3999082A
(en)
1976-12-21
Charge coupled amplifier
GB1377124A
(en)
1974-12-11
Charge coupled circuits
GB1521518A
(en)
1978-08-16
Semiconductor structures and methods of making them
GB1340619A
(en)
1973-12-12
Information storage devices
GB1470191A
(en)
1977-04-14
Charge coupled devices
GB1247892A
(en)
1971-09-29
Semiconductor memory device
EP0192142A1
(en)
1986-08-27
Charge transfer device
GB1414183A
(en)
1975-11-19
Charge coupled devices
US3735156A
(en)
1973-05-22
Reversible two-phase charge coupled devices
GB1429604A
(en)
1976-03-24
Non-volatile semiconductor memory device
US3902186A
(en)
1975-08-26
Surface charge transistor devices
GB1274986A
(en)
1972-05-17
Method of forming an oxide layer on a silicon substrate
GB1310868A
(en)
1973-03-21
Semiconductor device
GB1458076A
(en)
1976-12-08
Optical memory devices and memory systems
GB1374009A
(en)
1974-11-13
Information storage
GB1383977A
(en)
1974-02-12
Semiconductor device
US4194133A
(en)
1980-03-18
Charge coupled circuit arrangements and devices having controlled punch-through charge introduction
GB1422287A
(en)
1976-01-21
Insulated gate transistor
CA1085052A
(en)
1980-09-02
Charge coupled circuit arrangements and devices
JPS5850032B2
(en)
1983-11-08
Hand tie souchi
GB1561628A
(en)
1980-02-27
Arrangements
GB1442841A
(en)
1976-07-14
Charge coupled devices
Legal Events
Date
Code
Title
Description
1973-08-01
PS
Patent sealed
1977-04-06
PLNP
Patent lapsed through nonpayment of renewal fees
