GB1374721A – Information storage
– Google Patents
GB1374721A – Information storage
– Google Patents
Information storage
Info
Publication number
GB1374721A
GB1374721A
GB3101172A
GB3101172A
GB1374721A
GB 1374721 A
GB1374721 A
GB 1374721A
GB 3101172 A
GB3101172 A
GB 3101172A
GB 3101172 A
GB3101172 A
GB 3101172A
GB 1374721 A
GB1374721 A
GB 1374721A
Authority
GB
United Kingdom
Prior art keywords
region
iii
electrode
diffused
storage region
Prior art date
1971-07-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3101172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-07-06
Filing date
1972-07-03
Publication date
1974-11-20
1972-07-03
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1974-11-20
Publication of GB1374721A
publication
Critical
patent/GB1374721A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
abstract
3
238000009413
insulation
Methods
0.000
abstract
2
239000000463
material
Substances
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
238000012986
modification
Methods
0.000
abstract
1
230000004048
modification
Effects
0.000
abstract
1
229910021420
polycrystalline silicon
Inorganic materials
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/1025—Channel region of field-effect devices
H01L29/1062—Channel region of field-effect devices of charge coupled devices
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L29/42312—Gate electrodes for field effect devices
H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/762—Charge transfer devices
H01L29/765—Charge-coupled devices
H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Abstract
1374721 Semi-conductor memory elements INTERNATIONAL BUSINESS MACHINES CORP 3 July 1972 [6 July 1971 (2)] 31011/72 Addition to 1374009 Heading H1K In a memory element in which binary information is represented by the flow of charge between a storage region III of a semi-conductor body 1 and a diffused region 3 making a PN junction with the body 1, a single electrode 32 is capacitively coupled both to the storage region III and to a gate region II between the regions 3 and III. The threshold voltage required on the electrode 32 to induce an inversion layer in the underlying semi-conductor material is lower for the storage region III than for the gate region II, with the result that the inversion layer in the region III may be selectively connected to or isolated from the diffused region 3 by an inversion channel in the region II. Two alternative modes of operation employing this facility and termed respectively «reach-through» and «clear» modes are described. The difference in inversion threshold between the regions is achieved in the illustrated embodiment by the provision at region II of a diffused or ion implanted zone 25 of the same conductivity type as but higher conductivity than the body 1. In a modification of this embodiment the higher conductivity zone defining the region II completely surrounds the diffused region 3. Other methods of achieving the required threshold difference are by providing a thicker oxide insulation 30 between the electrode 32 and the gate region II than between the electrode 32 and the storage region III, by providing a nitrideon-oxide insulation above the storage region III and oxide alone above the gate region II, or by providing an Al electrode above the gate region II and an Al-on-doped polycrystalline Si above the storage region III.
GB3101172A
1971-07-06
1972-07-03
Information storage
Expired
GB1374721A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
US15990771A
1971-07-06
1971-07-06
US15986071A
1971-07-06
1971-07-06
Publications (1)
Publication Number
Publication Date
GB1374721A
true
GB1374721A
(en)
1974-11-20
Family
ID=26856384
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB3101172A
Expired
GB1374721A
(en)
1971-07-06
1972-07-03
Information storage
Country Status (3)
Country
Link
GB
(1)
GB1374721A
(en)
NL
(1)
NL7209362A
(en)
SE
(1)
SE384944B
(en)
1972
1972-06-14
SE
SE779672A
patent/SE384944B/en
unknown
1972-07-03
GB
GB3101172A
patent/GB1374721A/en
not_active
Expired
1972-07-04
NL
NL7209362A
patent/NL7209362A/xx
not_active
Application Discontinuation
Also Published As
Publication number
Publication date
NL7209362A
(en)
1973-01-09
SE384944B
(en)
1976-05-24
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Legal Events
Date
Code
Title
Description
1975-04-03
PS
Patent sealed
1983-01-26
PCNP
Patent ceased through non-payment of renewal fee
