GB1377699A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1377699A – Method of making a semiconductor device and a semiconductor device when made thereby
– Google Patents

GB1377699A – Method of making a semiconductor device and a semiconductor device when made thereby
– Google Patents
Method of making a semiconductor device and a semiconductor device when made thereby

Info

Publication number
GB1377699A

GB1377699A
GB5013572A
GB5013572A
GB1377699A
GB 1377699 A
GB1377699 A
GB 1377699A
GB 5013572 A
GB5013572 A
GB 5013572A
GB 5013572 A
GB5013572 A
GB 5013572A
GB 1377699 A
GB1377699 A
GB 1377699A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
diffusion
semiconductor device
semi
Prior art date
1971-11-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB5013572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Suwa Seikosha KK

Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-11-10
Filing date
1972-10-31
Publication date
1974-12-18

1972-10-31
Application filed by Suwa Seikosha KK
filed
Critical
Suwa Seikosha KK

1974-12-18
Publication of GB1377699A
publication
Critical
patent/GB1377699A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

H01L21/2251—Diffusion into or out of group IV semiconductors

H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon

Abstract

1377699 Semi-conductor devices SUWA SEIKOSHA KK 31 Oct 1972 [10 Nov 1971] 50135/72 Heading H1K In making a semi-conductor device a layer of polycrystalline silicon containing at least two types of impurity is formed on a silicon substrate and the impurities diffused from the layer into the substrate. As described the layer is deposited to a thickness of several hundred Š to several Á by feeding a mixture of silane, phosphine and boron hydride into a reaction chamber containing the substrate which is held at 500 to 700‹ C. The layer may be deposited over the entire substrate and reduced by photoetching to areas where diffusion is required. Oxide is deposited over the layer prior to diffusion, which may be effected in oxygen. After diffusion the polycrystalline silicon may be oxidized throughout its thickness. Surface concentrations from 1014 to 1020 atoms/cc. are obtainable by the method.

GB5013572A
1971-11-10
1972-10-31
Method of making a semiconductor device and a semiconductor device when made thereby

Expired

GB1377699A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

JP8970171A

JPS4855663A
(en)

1971-11-10
1971-11-10

Publications (1)

Publication Number
Publication Date

GB1377699A
true

GB1377699A
(en)

1974-12-18

Family
ID=13978063
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB5013572A
Expired

GB1377699A
(en)

1971-11-10
1972-10-31
Method of making a semiconductor device and a semiconductor device when made thereby

Country Status (4)

Country
Link

JP
(1)

JPS4855663A
(en)

CH
(1)

CH565452A5
(en)

DE
(1)

DE2255107A1
(en)

GB
(1)

GB1377699A
(en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

JPS5728942B2
(en)

1973-12-22
1982-06-19

JPS50134365A
(en)

1974-04-09
1975-10-24

JPS50159253A
(en)

1974-06-12
1975-12-23

DE2439408A1
(en)

1974-08-16
1976-02-26
Siemens Ag

SEMICONDUCTOR COMPONENT

DE2449688C3
(en)

1974-10-18
1980-07-10
Siemens Ag, 1000 Berlin Und 8000 Muenchen

Method for producing a doped zone of one conductivity type in a semiconductor body

JPS5153462A
(en)

1974-11-05
1976-05-11
Fujitsu Ltd
Handotaisochino seizohoho

JPS5154365A
(en)

1974-11-06
1976-05-13
Mitsubishi Electric Corp
Handotaisochino seizohoho

JPS5188174A
(en)

1975-01-31
1976-08-02

Handotaisochino seizohoho

JPS5222887A
(en)

1975-08-14
1977-02-21
Matsushita Electronics Corp
Semiconductor unit manufacturing system

JPS58108767A
(en)

1981-12-22
1983-06-28
Nec Corp
Manufacture of semiconductor device

US4549914A
(en)

1984-04-09
1985-10-29
At&T Bell Laboratories
Integrated circuit contact technique

1971

1971-11-10
JP
JP8970171A
patent/JPS4855663A/ja
active
Pending

1972

1972-10-31
GB
GB5013572A
patent/GB1377699A/en
not_active
Expired

1972-11-09
CH
CH1630072A
patent/CH565452A5/xx
not_active
IP Right Cessation

1972-11-10
DE
DE19722255107
patent/DE2255107A1/en
active
Pending

Also Published As

Publication number
Publication date

DE2255107A1
(en)

1973-05-17

JPS4855663A
(en)

1973-08-04

CH565452A5
(en)

1975-08-15

Información de contacto