GB1439217A – Semiconductor amplifying devices and circuits therefor
– Google Patents
GB1439217A – Semiconductor amplifying devices and circuits therefor
– Google Patents
Semiconductor amplifying devices and circuits therefor
Info
Publication number
GB1439217A
GB1439217A
GB4955373A
GB4955373A
GB1439217A
GB 1439217 A
GB1439217 A
GB 1439217A
GB 4955373 A
GB4955373 A
GB 4955373A
GB 4955373 A
GB4955373 A
GB 4955373A
GB 1439217 A
GB1439217 A
GB 1439217A
Authority
GB
United Kingdom
Prior art keywords
collector
avalanche
emitter
base
diffusion
Prior art date
1972-10-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4955373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1972-10-25
Filing date
1973-10-24
Publication date
1976-06-16
1973-10-24
Application filed by General Electric Co
filed
Critical
General Electric Co
1976-06-16
Publication of GB1439217A
publication
Critical
patent/GB1439217A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
4
229910052710
silicon
Inorganic materials
0.000
abstract
4
239000010703
silicon
Substances
0.000
abstract
4
239000000969
carrier
Substances
0.000
abstract
3
238000009792
diffusion process
Methods
0.000
abstract
3
239000012190
activator
Substances
0.000
abstract
2
KAPYVWKEUSXLKC-UHFFFAOYSA-N
[Sb].[Au]
Chemical compound
[Sb].[Au]
KAPYVWKEUSXLKC-UHFFFAOYSA-N
0.000
abstract
1
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1
229910052782
aluminium
Inorganic materials
0.000
abstract
1
239000004411
aluminium
Substances
0.000
abstract
1
230000003247
decreasing effect
Effects
0.000
abstract
1
230000005684
electric field
Effects
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
229910052732
germanium
Inorganic materials
0.000
abstract
1
GNPVGFCGXDBREM-UHFFFAOYSA-N
germanium atom
Chemical compound
[Ge]
GNPVGFCGXDBREM-UHFFFAOYSA-N
0.000
abstract
1
239000010410
layer
Substances
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
238000001465
metallisation
Methods
0.000
abstract
1
230000002093
peripheral effect
Effects
0.000
abstract
1
239000002356
single layer
Substances
0.000
abstract
1
239000000758
substrate
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/73—Bipolar junction transistors
H01L29/7313—Avalanche transistors
Abstract
1439217 Microwave transistor GENERAL ELECTRIC CO 24 Oct 1973 [25 Oct 1972] 49553/73 Heading H1K The collector region of a microwave-amplifying transistor has an avalanche portion adjacent the collector junction and a uniformly doped drift portion extending from the avalanche portion to the collector electrode. The distance between the collector junction and the collector electrode is chosen to be half the saturation drift velocity of majority carriers in the collector divided by the centre frequency of the band to be amplified, and the net activator concentration is chosen to vary along the length of the collector region such that when it is depleted along its length an electric field is produced therein which produces a finite value of conduction carrier multiplication. The material of this collector region should have an avalanche multiplication factor for the majority carriers therein significantly greater than that for minority carriers. Over a wide range of field intensities, silicon is useful for NPN transistors and germanium for PNP. A silicon transistor is typically operated with a bias such as to give an electron multiplication factor in the range 5-50. The net activator concentrations in emitter, base, avalanche portion and drift portion may typically differ in a decreasing direction by steps of two orders of magnitude. The particular silicon transistor shown has a collector electrode comprising the N + substrate 51 and a gold-antimony ohmic contact 67 thereto. The drift portion of the collector is formed by an N- epitaxial layer 52 in which the avalanche portion 53 is formed by diffusion. The base region 55 and its peripheral guard portion are also formed by diffusion. The emitter regions 56 are formed by diffusion from epitaxially deposited N-type silicon 57 forming portions of the emitter electrodes which are completed by aluminium 58 deposited as a single layer with the base electrodes 61 and separated therefrom by etching. The emitter and base metallization is interdigitated.
GB4955373A
1972-10-25
1973-10-24
Semiconductor amplifying devices and circuits therefor
Expired
GB1439217A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US00300481A
US3821657A
(en)
1972-10-25
1972-10-25
High frequency semiconductor amplifying devices and circuits therefor
Publications (1)
Publication Number
Publication Date
GB1439217A
true
GB1439217A
(en)
1976-06-16
Family
ID=23159272
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4955373A
Expired
GB1439217A
(en)
1972-10-25
1973-10-24
Semiconductor amplifying devices and circuits therefor
Country Status (5)
Country
Link
US
(1)
US3821657A
(en)
JP
(1)
JPS49135585A
(en)
DE
(1)
DE2353029A1
(en)
FR
(1)
FR2204894B1
(en)
GB
(1)
GB1439217A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2356286A
(en)
*
1999-07-07
2001-05-16
James Rodger Leitch
Transistor with highly doped collector region to reduce noise when used as an amplifier
Families Citing this family (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3940783A
(en)
*
1974-02-11
1976-02-24
Signetics Corporation
Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure
US4109169A
(en)
*
1976-12-06
1978-08-22
General Electric Company
Avalanche memory triode and logic circuits
JPH0612802B2
(en)
*
1983-03-12
1994-02-16
財団法人半導体研究振興会
Semiconductor integrated circuit device and manufacturing method thereof
US4975751A
(en)
*
1985-09-09
1990-12-04
Harris Corporation
High breakdown active device structure with low series resistance
US5091336A
(en)
*
1985-09-09
1992-02-25
Harris Corporation
Method of making a high breakdown active device structure with low series resistance
JP5218370B2
(en)
*
2009-10-16
2013-06-26
株式会社豊田中央研究所
Current amplification circuit and light detection device
JP5604901B2
(en)
*
2010-02-18
2014-10-15
株式会社豊田中央研究所
Current amplification element
EP3435419A1
(en)
*
2017-07-26
2019-01-30
ams AG
Semiconductor device with single electron counting capability comprising an avalanche bipolar transistor
Family Cites Families (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3054972A
(en)
*
1961-02-21
1962-09-18
Bell Telephone Labor Inc
Negative resistance semiconductive device
1972
1972-10-25
US
US00300481A
patent/US3821657A/en
not_active
Expired – Lifetime
1973
1973-10-23
DE
DE19732353029
patent/DE2353029A1/en
active
Pending
1973-10-24
FR
FR7337839A
patent/FR2204894B1/fr
not_active
Expired
1973-10-24
JP
JP48119061A
patent/JPS49135585A/ja
active
Pending
1973-10-24
GB
GB4955373A
patent/GB1439217A/en
not_active
Expired
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2356286A
(en)
*
1999-07-07
2001-05-16
James Rodger Leitch
Transistor with highly doped collector region to reduce noise when used as an amplifier
GB2356286B
(en)
*
1999-07-07
2002-10-23
James Rodger Leitch
Low noise semiconductor amplifier
Also Published As
Publication number
Publication date
FR2204894B1
(en)
1978-05-26
US3821657A
(en)
1974-06-28
FR2204894A1
(en)
1974-05-24
JPS49135585A
(en)
1974-12-27
DE2353029A1
(en)
1974-05-09
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Legal Events
Date
Code
Title
Description
1976-10-27
PS
Patent sealed [section 19, patents act 1949]
1981-04-15
746
Register noted ‘licences of right’ (sect. 46/1977)
1988-06-15
PCNP
Patent ceased through non-payment of renewal fee
