GB1461683A – Information storage apparatus
– Google Patents
GB1461683A – Information storage apparatus
– Google Patents
Information storage apparatus
Info
Publication number
GB1461683A
GB1461683A
GB1445574A
GB1445574A
GB1461683A
GB 1461683 A
GB1461683 A
GB 1461683A
GB 1445574 A
GB1445574 A
GB 1445574A
GB 1445574 A
GB1445574 A
GB 1445574A
GB 1461683 A
GB1461683 A
GB 1461683A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
capacitor
capacitance
stored
Prior art date
1973-04-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1445574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-04-05
Filing date
1974-04-02
Publication date
1977-01-19
1974-04-02
Application filed by Western Electric Co Inc
filed
Critical
Western Electric Co Inc
1977-01-19
Publication of GB1461683A
publication
Critical
patent/GB1461683A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Abstract
1461683 Semi-conductor devices WESTERN ELECTRIC CO Inc 2 April 1974 [5 April 1973] 14455/74 Heading H1K [Also in Division H3] A storage matrix uses two terminal metalinsulator-semi-conductor (MIS) capacitors C11 … C23 … C31 …, Fig. 1, each having a capacitance versus voltage characteristic as shown in Fig. 2, the stored data being represented by the stable high or low capacitance values in the hysteresis portion of the characteristic. Readout is effected on a word basis by applying a bias pulse V 0 from a voltage source 11 to a selected row line, the bias pulse being augmented by a short pulse DV when the transient disturbance due to V 0 has passed. Since there are two possible values of capacitance, the data stored is identified by column output detectors A1 to A4 as high or low changes of charge when the short pulse DV is applied. To write or erase data a voltage V of appropriate polarity and corresponding in value to one half of the capacitor switching threshold is applied to each of selected rows and columns. The capacitors are formed on a common P-type silicon substrate 31, Fig. 3, each capacitor being positioned between row and column lines respectively formed by a diffused or implanted N + stripe 32 and a gold stripe 43. Formation of the capacitor structure comprises the growth of an N-type epitaxial layer 33, and the implanting of capacitor isolation rods 34 which can be either P + diffused regions or etched troughs filled with silicon dioxide. The semi-conductor portion is overlaid by two insulating layers 41, 42 between which electric charge carriers induced to tunnel from the semi-conductor are stored, the layers being formed, respectively, of silicon dioxide and aluminium oxide.
GB1445574A
1973-04-05
1974-04-02
Information storage apparatus
Expired
GB1461683A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US348299A
US3859642A
(en)
1973-04-05
1973-04-05
Random access memory array of hysteresis loop capacitors
Publications (1)
Publication Number
Publication Date
GB1461683A
true
GB1461683A
(en)
1977-01-19
Family
ID=23367417
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1445574A
Expired
GB1461683A
(en)
1973-04-05
1974-04-02
Information storage apparatus
Country Status (6)
Country
Link
US
(1)
US3859642A
(en)
JP
(1)
JPS49131546A
(en)
CA
(1)
CA1016265A
(en)
DE
(1)
DE2415634A1
(en)
FR
(1)
FR2224835B1
(en)
GB
(1)
GB1461683A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
EP0367443A1
(en)
*
1988-10-31
1990-05-09
Raytheon Company
Ferroelectric memory
Families Citing this family (13)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3911464A
(en)
*
1973-05-29
1975-10-07
Ibm
Nonvolatile semiconductor memory
US3979734A
(en)
*
1975-06-16
1976-09-07
International Business Machines Corporation
Multiple element charge storage memory cell
US4057821A
(en)
*
1975-11-20
1977-11-08
Nitron Corporation/Mcdonnell-Douglas Corporation
Non-volatile semiconductor memory device
US4096509A
(en)
*
1976-07-22
1978-06-20
The United States Of America As Represented By The Secretary Of The Air Force
MNOS memory transistor having a redeposited silicon nitride gate dielectric
US4242736A
(en)
*
1976-10-29
1980-12-30
Massachusetts Institute Of Technology
Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4127900A
(en)
*
1976-10-29
1978-11-28
Massachusetts Institute Of Technology
Reading capacitor memories with a variable voltage ramp
US4384299A
(en)
*
1976-10-29
1983-05-17
Massachusetts Institute Of Technology
Capacitor memory and methods for reading, writing, and fabricating capacitor memories
EP0055110A3
(en)
*
1980-12-22
1984-11-14
Texas Instruments Incorporated
Nonvolatile high density jfet ram cell
US4535349A
(en)
*
1981-12-31
1985-08-13
International Business Machines Corporation
Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US5434811A
(en)
*
1987-11-19
1995-07-18
National Semiconductor Corporation
Non-destructive read ferroelectric based memory circuit
US5196912A
(en)
*
1988-10-28
1993-03-23
Casio Computer Co., Ltd.
Thin film transistor having memory function and method for using thin film transistor as memory element
JP2825135B2
(en)
*
1990-03-06
1998-11-18
富士通株式会社
Semiconductor memory device and information writing / reading / erasing method therefor
US5926412A
(en)
*
1992-02-09
1999-07-20
Raytheon Company
Ferroelectric memory structure
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL192242A
(en)
*
1953-11-10
US3500142A
(en)
*
1967-06-05
1970-03-10
Bell Telephone Labor Inc
Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3623023A
(en)
*
1967-12-01
1971-11-23
Sperry Rand Corp
Variable threshold transistor memory using pulse coincident writing
US3549911A
(en)
*
1968-12-05
1970-12-22
Rca Corp
Variable threshold level field effect memory device
1973
1973-04-05
US
US348299A
patent/US3859642A/en
not_active
Expired – Lifetime
1974
1974-01-15
CA
CA190,177A
patent/CA1016265A/en
not_active
Expired
1974-03-28
FR
FR7410723A
patent/FR2224835B1/fr
not_active
Expired
1974-03-30
DE
DE2415634A
patent/DE2415634A1/en
not_active
Withdrawn
1974-04-02
GB
GB1445574A
patent/GB1461683A/en
not_active
Expired
1974-04-05
JP
JP49038102A
patent/JPS49131546A/ja
active
Pending
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
EP0367443A1
(en)
*
1988-10-31
1990-05-09
Raytheon Company
Ferroelectric memory
AU622490B2
(en)
*
1988-10-31
1992-04-09
Raytheon Company
Ferroelectric memory
Also Published As
Publication number
Publication date
DE2415634A1
(en)
1974-11-21
FR2224835B1
(en)
1977-06-17
JPS49131546A
(en)
1974-12-17
US3859642A
(en)
1975-01-07
CA1016265A
(en)
1977-08-23
FR2224835A1
(en)
1974-10-31
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Legal Events
Date
Code
Title
Description
1977-06-01
PS
Patent sealed [section 19, patents act 1949]
1982-10-27
PCNP
Patent ceased through non-payment of renewal fee
