GB1462253A – Methods of depositing silicon dioxide layers on silicon substrates
– Google Patents
GB1462253A – Methods of depositing silicon dioxide layers on silicon substrates
– Google Patents
Methods of depositing silicon dioxide layers on silicon substrates
Info
Publication number
GB1462253A
GB1462253A
GB2219974A
GB2219974A
GB1462253A
GB 1462253 A
GB1462253 A
GB 1462253A
GB 2219974 A
GB2219974 A
GB 2219974A
GB 2219974 A
GB2219974 A
GB 2219974A
GB 1462253 A
GB1462253 A
GB 1462253A
Authority
GB
United Kingdom
Prior art keywords
reaction mixture
silicon dioxide
silicon
depositing
methods
Prior art date
1973-06-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2219974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-06-29
Filing date
1974-05-17
Publication date
1977-01-19
1974-05-17
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1977-01-19
Publication of GB1462253A
publication
Critical
patent/GB1462253A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/40—Oxides
C23C16/401—Oxides containing silicon
C23C16/402—Silicon dioxide
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/314—Inorganic layers
H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
H01L21/31604—Deposition from a gas or vapour
H01L21/31608—Deposition of SiO2
H01L21/31612—Deposition of SiO2 on a silicon body
Abstract
1462253 Silicon dioxide deposition INTERNATIONAL BUSINESS MACHINES CORP 17 May 1974 [29 June 1973] 22199/74 Heading C1A A method of depositing a silicon dioxide film on a silicon substrate by deposition from the vapour phase, comprises heating the silicon substrate (preferably to a temperature of at least 700 C.) in a gaseous reaction mixture comprising an oxidizing agent, hydrogen chloride, and a compound of formula SiH n Cl 4-n , where n is an integer from 0 to 4. Preferably, the oxidising agent is carbon dioxide, the hydrogen chloride is present in a concentration of from 0À1 to 3À0 mole per cent of the reaction mixture, and the reaction mixture comprises additionally hydrogen as a carrier gas.
GB2219974A
1973-06-29
1974-05-17
Methods of depositing silicon dioxide layers on silicon substrates
Expired
GB1462253A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US375297A
US3887726A
(en)
1973-06-29
1973-06-29
Method of chemical vapor deposition to provide silicon dioxide films with reduced surface state charge on semiconductor substrates
Publications (1)
Publication Number
Publication Date
GB1462253A
true
GB1462253A
(en)
1977-01-19
Family
ID=23480303
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2219974A
Expired
GB1462253A
(en)
1973-06-29
1974-05-17
Methods of depositing silicon dioxide layers on silicon substrates
Country Status (7)
Country
Link
US
(1)
US3887726A
(en)
JP
(1)
JPS5240639B2
(en)
CA
(1)
CA1027024A
(en)
DE
(1)
DE2422970C3
(en)
FR
(1)
FR2235486B1
(en)
GB
(1)
GB1462253A
(en)
IT
(1)
IT1012363B
(en)
Cited By (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2182061A
(en)
*
1985-10-24
1987-05-07
Rca Corp
Vapor deposition apparatus
GB2212173A
(en)
*
1987-11-11
1989-07-19
Sumitomo Chemical Co
Heated reactor for vapor-phase growth of films
GB2234264A
(en)
*
1989-06-19
1991-01-30
Glaverbel
Pyrolytically forming an oxide coating on a hot glass substrate by pre-mixing reactants
US5221352A
(en)
*
1989-06-19
1993-06-22
Glaverbel
Apparatus for pyrolytically forming an oxide coating on a hot glass substrate
Families Citing this family (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS5922380B2
(en)
*
1975-12-03
1984-05-26
株式会社東芝
Handout Taisoshino Seizouhouhou
US4045594A
(en)
*
1975-12-31
1977-08-30
Ibm Corporation
Planar insulation of conductive patterns by chemical vapor deposition and sputtering
US4239811A
(en)
*
1979-08-16
1980-12-16
International Business Machines Corporation
Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
US4950977A
(en)
*
1988-12-21
1990-08-21
At&T Bell Laboratories
Method of measuring mobile ion concentration in semiconductor devices
Family Cites Families (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3511702A
(en)
*
1965-08-20
1970-05-12
Motorola Inc
Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3556879A
(en)
*
1968-03-20
1971-01-19
Rca Corp
Method of treating semiconductor devices
US3692571A
(en)
*
1970-11-12
1972-09-19
Northern Electric Co
Method of reducing the mobile ion contamination in thermally grown silicon dioxide
1973
1973-06-29
US
US375297A
patent/US3887726A/en
not_active
Expired – Lifetime
1974
1974-04-29
FR
FR7415813A
patent/FR2235486B1/fr
not_active
Expired
1974-05-11
DE
DE2422970A
patent/DE2422970C3/en
not_active
Expired
1974-05-15
IT
IT22718/74A
patent/IT1012363B/en
active
1974-05-17
GB
GB2219974A
patent/GB1462253A/en
not_active
Expired
1974-05-17
JP
JP49054626A
patent/JPS5240639B2/ja
not_active
Expired
1974-06-04
CA
CA201,591A
patent/CA1027024A/en
not_active
Expired
Cited By (9)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2182061A
(en)
*
1985-10-24
1987-05-07
Rca Corp
Vapor deposition apparatus
GB2182061B
(en)
*
1985-10-24
1990-02-21
Rca Corp
Substrate treatment apparatus
GB2212173A
(en)
*
1987-11-11
1989-07-19
Sumitomo Chemical Co
Heated reactor for vapor-phase growth of films
US4976216A
(en)
*
1987-11-11
1990-12-11
Sumitomo Chemical Co., Ltd.
Apparatus for vapor-phase growth
GB2212173B
(en)
*
1987-11-11
1991-10-16
Sumitomo Chemical Co
Heated reactor fo vapor-phase growth of films
GB2234264A
(en)
*
1989-06-19
1991-01-30
Glaverbel
Pyrolytically forming an oxide coating on a hot glass substrate by pre-mixing reactants
US5089039A
(en)
*
1989-06-19
1992-02-18
Glaverbel
Method for pyrolxtically forming a silicon oxide coating on a hot glass substrate
US5221352A
(en)
*
1989-06-19
1993-06-22
Glaverbel
Apparatus for pyrolytically forming an oxide coating on a hot glass substrate
GB2234264B
(en)
*
1989-06-19
1993-07-28
Glaverbel
Method of and apparatus for pyrolytically forming an oxide coating on a hot glass substrate
Also Published As
Publication number
Publication date
US3887726A
(en)
1975-06-03
JPS5240639B2
(en)
1977-10-13
JPS5023395A
(en)
1975-03-13
CA1027024A
(en)
1978-02-28
FR2235486A1
(en)
1975-01-24
FR2235486B1
(en)
1977-10-14
DE2422970B2
(en)
1980-09-04
DE2422970C3
(en)
1981-06-11
IT1012363B
(en)
1977-03-10
DE2422970A1
(en)
1975-01-23
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Legal Events
Date
Code
Title
Description
1977-06-01
PS
Patent sealed [section 19, patents act 1949]
1987-01-07
PCNP
Patent ceased through non-payment of renewal fee
