GB1467263A – Semiconductor device
– Google Patents
GB1467263A – Semiconductor device
– Google Patents
Semiconductor device
Info
Publication number
GB1467263A
GB1467263A
GB532174A
GB532174A
GB1467263A
GB 1467263 A
GB1467263 A
GB 1467263A
GB 532174 A
GB532174 A
GB 532174A
GB 532174 A
GB532174 A
GB 532174A
GB 1467263 A
GB1467263 A
GB 1467263A
Authority
GB
United Kingdom
Prior art keywords
layer
region
contact
emitter
base
Prior art date
1973-02-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB532174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-02-05
Filing date
1974-02-05
Publication date
1977-03-16
1974-02-05
Application filed by Honeywell Inc
filed
Critical
Honeywell Inc
1977-03-16
Publication of GB1467263A
publication
Critical
patent/GB1467263A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
3
239000012535
impurity
Substances
0.000
abstract
4
238000009792
diffusion process
Methods
0.000
abstract
2
229910021420
polycrystalline silicon
Inorganic materials
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
229910004298
SiO 2
Inorganic materials
0.000
abstract
1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
1
229910052785
arsenic
Inorganic materials
0.000
abstract
1
RQNWIZPPADIBDY-UHFFFAOYSA-N
arsenic atom
Chemical compound
[As]
RQNWIZPPADIBDY-UHFFFAOYSA-N
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
229910052751
metal
Inorganic materials
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
238000001465
metallisation
Methods
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
229920005591
polysilicon
Polymers
0.000
abstract
1
229910052710
silicon
Inorganic materials
0.000
abstract
1
239000010703
silicon
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
H01L21/2251—Diffusion into or out of group IV semiconductors
H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/314—Inorganic layers
H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
H01L21/31604—Deposition from a gas or vapour
H01L21/31608—Deposition of SiO2
H01L21/31612—Deposition of SiO2 on a silicon body
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1467263 Semi-conductor devices HONEYWELL Inc 5 Feb 1974 [5 Feb 1973] 5321/74 Heading H1K In a method of making a semi-conductor device, as shown a bipolar transistor, a diffused P+ region 11, Fig. 3, is formed below a major surface of an isolated portion of an N- type epitaxial silicon layer 10, an apertured insulating layer 12 is formed thereover, and the surface exposed by the aperture is covered by a layer 14 of N-doped polycrystalline silicon. The structure is then heated to effect diffusion of acceptor impurities from region 11 further into layer 10, and of donor impurities from layer 14 into the central part of region 11 to form a N ++ emitter region 15, Fig. 6. The donor impurity is preferably arsenic, which locally reduces the diffusion rate of the preferred acceptor impurity, boron, to form a narrow necked base region 11
GB532174A
1973-02-05
1974-02-05
Semiconductor device
Expired
GB1467263A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US329795A
US3915767A
(en)
1973-02-05
1973-02-05
Rapidly responsive transistor with narrowed base
Publications (1)
Publication Number
Publication Date
GB1467263A
true
GB1467263A
(en)
1977-03-16
Family
ID=23287051
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB532174A
Expired
GB1467263A
(en)
1973-02-05
1974-02-05
Semiconductor device
Country Status (3)
Country
Link
US
(1)
US3915767A
(en)
JP
(1)
JPS49107679A
(en)
GB
(1)
GB1467263A
(en)
Families Citing this family (20)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4006046A
(en)
*
1975-04-21
1977-02-01
Trw Inc.
Method for compensating for emitter-push effect in the fabrication of transistors
US4063973A
(en)
*
1975-11-10
1977-12-20
Tokyo Shibaura Electric Co., Ltd.
Method of making a semiconductor device
JPS5359380A
(en)
*
1976-11-09
1978-05-29
Nippon Gakki Seizo Kk
Production of transistor
JPS543479A
(en)
*
1977-06-09
1979-01-11
Toshiba Corp
Semiconductor device and its manufacture
US4191603A
(en)
*
1978-05-01
1980-03-04
International Business Machines Corporation
Making semiconductor structure with improved phosphosilicate glass isolation
US4157269A
(en)
*
1978-06-06
1979-06-05
International Business Machines Corporation
Utilizing polysilicon diffusion sources and special masking techniques
JPS5544713A
(en)
*
1978-09-26
1980-03-29
Toshiba Corp
Semiconductor device
JPS5586151A
(en)
*
1978-12-23
1980-06-28
Chiyou Lsi Gijutsu Kenkyu Kumiai
Manufacture of semiconductor integrated circuit
US4263066A
(en)
*
1980-06-09
1981-04-21
Varian Associates, Inc.
Process for concurrent formation of base diffusion and p+ profile from single source predeposition
US4567644A
(en)
*
1982-12-20
1986-02-04
Signetics Corporation
Method of making triple diffused ISL structure
IT1188309B
(en)
*
1986-01-24
1988-01-07
Sgs Microelettrica Spa
PROCEDURE FOR THE MANUFACTURE OF INTEGRATED ELECTRONIC DEVICES, IN PARTICULAR HIGH VOLTAGE P CHANNEL MOS TRANSISTORS
JP2565317B2
(en)
*
1986-12-03
1996-12-18
富士通株式会社
Method for manufacturing semiconductor device
KR900005123B1
(en)
*
1987-09-26
1990-07-19
삼성전자 주식회사
Bipolar transistor manufacturing method
US5236867A
(en)
*
1987-11-13
1993-08-17
Matsushita Electronics Corporation
Manufacturing method of contact hole arrangement of a semiconductor device
US5008207A
(en)
*
1989-09-11
1991-04-16
International Business Machines Corporation
Method of fabricating a narrow base transistor
US5132765A
(en)
*
1989-09-11
1992-07-21
Blouse Jeffrey L
Narrow base transistor and method of fabricating same
US5274267A
(en)
*
1992-01-31
1993-12-28
International Business Machines Corporation
Bipolar transistor with low extrinsic base resistance and low noise
JP2924417B2
(en)
*
1992-02-26
1999-07-26
日本電気株式会社
Semiconductor device
JP3527148B2
(en)
*
1999-09-24
2004-05-17
日本電気株式会社
Method for manufacturing semiconductor device
US6406966B1
(en)
*
2000-11-07
2002-06-18
National Semiconductor Corporation
Uniform emitter formation using selective laser recrystallization
Family Cites Families (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3664896A
(en)
*
1969-07-28
1972-05-23
David M Duncan
Deposited silicon diffusion sources
JPS495668B1
(en)
*
1970-04-03
1974-02-08
US3660156A
(en)
*
1970-08-19
1972-05-02
Monsanto Co
Semiconductor doping compositions
US3673471A
(en)
*
1970-10-08
1972-06-27
Fairchild Camera Instr Co
Doped semiconductor electrodes for mos type devices
US3759762A
(en)
*
1970-10-19
1973-09-18
Motorola Inc
Method of forming integrated circuits utilizing low resistance valueslow temperature deposited oxides and shallow junctions
US3753807A
(en)
*
1972-02-24
1973-08-21
Bell Canada Northern Electric
Manufacture of bipolar semiconductor devices
1973
1973-02-05
US
US329795A
patent/US3915767A/en
not_active
Expired – Lifetime
1974
1974-01-29
JP
JP49011565A
patent/JPS49107679A/ja
active
Pending
1974-02-05
GB
GB532174A
patent/GB1467263A/en
not_active
Expired
Also Published As
Publication number
Publication date
US3915767A
(en)
1975-10-28
JPS49107679A
(en)
1974-10-12
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Legal Events
Date
Code
Title
Description
1977-07-27
PS
Patent sealed [section 19, patents act 1949]
1981-09-16
PCNP
Patent ceased through non-payment of renewal fee
