GB1476489A

GB1476489A – Thin film magnetic storage device
– Google Patents

GB1476489A – Thin film magnetic storage device
– Google Patents
Thin film magnetic storage device

Info

Publication number
GB1476489A

GB1476489A
GB3881174A
GB3881174A
GB1476489A
GB 1476489 A
GB1476489 A
GB 1476489A
GB 3881174 A
GB3881174 A
GB 3881174A
GB 3881174 A
GB3881174 A
GB 3881174A
GB 1476489 A
GB1476489 A
GB 1476489A
Authority
GB
United Kingdom
Prior art keywords
layer
channels
domain
coercivity
channel
Prior art date
1973-09-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB3881174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

BASF SE

Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1973-09-06
Filing date
1974-09-05
Publication date
1977-06-16

1974-09-05
Application filed by BASF SE
filed
Critical
BASF SE

1977-06-16
Publication of GB1476489A
publication
Critical
patent/GB1476489A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers

G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements

G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure

G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation

G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current

Abstract

1476489 Magnetic domain devices BASF AG 5 Sept 1974 [6 Sept 1973] 38811/74 Heading H3B A magnetic domain device, e.g. a shift register, has low coercivity strip channels 24 in a high coercivity layer and domain propagating conductors 41, 42 and 61, 62 intersecting the channels at right angles and arranged in staggered fashion as shown in two planes parallel to the layer. The conductors are at least as wide as the channels and are photoetched out of copper coated on both sides of a polyester sheet 50 and are pulsed in a predetermined sequence of polarities to drive domains for electric or optical read-out and electronic recycling. The channel layer is of 64 : 15 : 21 : NiFeCo alloy vapour-deposited on an Al or Ag layer evaporated on a glass, ceramic or metal substrate 10. The Al or Ag is removed by photoetching in the channel locations so that the alloy layer is deposited directly on to the substrate which has a smoother surface than the Al or Ag layer and therefore a lower coercivity. Alternatively an over-layer of ferromagnetic material of high coercivity and possibly spaced from the channels by an SiO layer is exchangecoupled with the domain layer outside the channels to define the channel boundaries, or Cu or Au may be diffused into the domain layer.

GB3881174A
1973-09-06
1974-09-05
Thin film magnetic storage device

Expired

GB1476489A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

DE19732344983

DE2344983A1
(en)

1973-09-06
1973-09-06

MAGNETIC THIN-LAYER STORAGE

Publications (1)

Publication Number
Publication Date

GB1476489A
true

GB1476489A
(en)

1977-06-16

Family
ID=5891834
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB3881174A
Expired

GB1476489A
(en)

1973-09-06
1974-09-05
Thin film magnetic storage device

Country Status (6)

Country
Link

US
(1)

US3962690A
(en)

JP
(1)

JPS5718272B2
(en)

DE
(1)

DE2344983A1
(en)

FR
(1)

FR2243491B1
(en)

GB
(1)

GB1476489A
(en)

IT
(1)

IT1019191B
(en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US5477482A
(en)

*

1993-10-01
1995-12-19
The United States Of America As Represented By The Secretary Of The Navy
Ultra high density, non-volatile ferromagnetic random access memory

US5768183A
(en)

*

1996-09-25
1998-06-16
Motorola, Inc.
Multi-layer magnetic memory cells with improved switching characteristics

US9459835B2
(en)

2014-01-15
2016-10-04
HGST Netherlands B.V.
Random number generator by superparamagnetism

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

NL257524A
(en)

*

1959-11-02

US3241126A
(en)

*

1961-05-25
1966-03-15
Hughes Aircraft Co
Magnetic shift register

US3292161A
(en)

*

1962-01-19
1966-12-13
Interstate Electronics Corp
Thin film shift register

FR2123122B1
(en)

*

1971-01-14
1976-03-19
Tech Systemes Informa Iq

1973

1973-09-06
DE
DE19732344983
patent/DE2344983A1/en
not_active
Withdrawn

1974

1974-09-02
JP
JP10000174A
patent/JPS5718272B2/ja
not_active
Expired

1974-09-05
US
US05/503,285
patent/US3962690A/en
not_active
Expired – Lifetime

1974-09-05
GB
GB3881174A
patent/GB1476489A/en
not_active
Expired

1974-09-05
IT
IT52889/74A
patent/IT1019191B/en
active

1974-09-06
FR
FR7430254A
patent/FR2243491B1/fr
not_active
Expired

Also Published As

Publication number
Publication date

JPS5718272B2
(en)

1982-04-15

FR2243491A1
(en)

1975-04-04

IT1019191B
(en)

1977-11-10

FR2243491B1
(en)

1981-08-07

US3962690A
(en)

1976-06-08

DE2344983A1
(en)

1975-03-20

JPS5056831A
(en)

1975-05-17

Similar Documents

Publication
Publication Date
Title

FR2332338A1
(en)

1977-06-17

PROCESS FOR COATING BY REAGENT ION DEPOSIT AN INSULATING SUBSTRATE WITH AN OXIDE LAYER OF AT LEAST ONE METAL

KR920008849A
(en)

1992-05-28

Semiconductor device manufacturing method

GB1476489A
(en)

1977-06-16

Thin film magnetic storage device

GB1412313A
(en)

1975-11-05

Memory device using ferromagnetic substance lines

GB1193775A
(en)

1970-06-03

Improvement in and relating to Magnetic Memory Elements

JPS5327374A
(en)

1978-03-14

High voltage drive metal oxide semiconductor device

GB1418346A
(en)

1975-12-17

Optical isolator

JPS5573931A
(en)

1980-06-04

High-recording-density magnetic disk

JPS56137675A
(en)

1981-10-27

Semiconductor device and manufacture thereof

GB1147588A
(en)

1969-04-02

A magnetic storage device

GB1493194A
(en)

1977-11-23

Registers for propagation of magnetic domains

SU604031A1
(en)

1978-04-25

Magnetic storage

JPS5334483A
(en)

1978-03-31

Substrate for semiconductor integrating circuit

JPS52123611A
(en)

1977-10-18

Multielement thin film magnetic head

JPS52122054A
(en)

1977-10-13

Magnetic babble driving coil

JPS5399081A
(en)

1978-08-30

Sputtering apparatus

JPS5217846A
(en)

1977-02-10

Liquid crystal indicator

JPS5721883A
(en)

1982-02-04

Magnetic reluctance effect element

JPS54143116A
(en)

1979-11-08

Magnetic recording medium

GB1294445A
(en)

1972-10-25

Improvements relating to methods of manufacturing arrays of thin magnetic elements and arrays produced by the methods

JPS56137514A
(en)

1981-10-27

Thin film magnetic head

JPH04317408A
(en)

1992-11-09

Oxide superconducting material

JPS5721837A
(en)

1982-02-04

Manufacture of plural layer wiring structure on integrated circuit

JPS57176803A
(en)

1982-10-30

Delay element

JPS5632704A
(en)

1981-04-02

Magnetic device with monocrystalline garnet substrate with magnetic layer

Legal Events

Date
Code
Title
Description

1977-10-26
PS
Patent sealed [section 19, patents act 1949]

1984-05-23
PCNP
Patent ceased through non-payment of renewal fee

Download PDF in English

None