GB1488184A – X-ray mask structures and methods for making the same
– Google Patents
GB1488184A – X-ray mask structures and methods for making the same
– Google Patents
X-ray mask structures and methods for making the same
Info
Publication number
GB1488184A
GB1488184A
GB6228/75A
GB622875A
GB1488184A
GB 1488184 A
GB1488184 A
GB 1488184A
GB 6228/75 A
GB6228/75 A
GB 6228/75A
GB 622875 A
GB622875 A
GB 622875A
GB 1488184 A
GB1488184 A
GB 1488184A
Authority
GB
United Kingdom
Prior art keywords
resist
rays
wafer
mask
feb
Prior art date
1974-02-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6228/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1974-02-15
Filing date
1975-02-13
Publication date
1977-10-05
1975-02-13
Application filed by Western Electric Co Inc
filed
Critical
Western Electric Co Inc
1977-10-05
Publication of GB1488184A
publication
Critical
patent/GB1488184A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
235000012431
wafers
Nutrition
0.000
abstract
4
239000010410
layer
Substances
0.000
abstract
2
230000005855
radiation
Effects
0.000
abstract
2
238000012668
chain scission
Methods
0.000
abstract
1
229920001577
copolymer
Polymers
0.000
abstract
1
238000004132
cross linking
Methods
0.000
abstract
1
230000000694
effects
Effects
0.000
abstract
1
229910052737
gold
Inorganic materials
0.000
abstract
1
238000010438
heat treatment
Methods
0.000
abstract
1
238000010884
ion-beam technique
Methods
0.000
abstract
1
238000003801
milling
Methods
0.000
abstract
1
239000011368
organic material
Substances
0.000
abstract
1
238000000206
photolithography
Methods
0.000
abstract
1
229910052697
platinum
Inorganic materials
0.000
abstract
1
229920003229
poly(methyl methacrylate)
Polymers
0.000
abstract
1
-1
polyethylene terephthalate
Polymers
0.000
abstract
1
229920000139
polyethylene terephthalate
Polymers
0.000
abstract
1
239000005020
polyethylene terephthalate
Substances
0.000
abstract
1
239000004926
polymethyl methacrylate
Substances
0.000
abstract
1
239000011241
protective layer
Substances
0.000
abstract
1
229910052703
rhodium
Inorganic materials
0.000
abstract
1
239000002904
solvent
Substances
0.000
abstract
1
238000001228
spectrum
Methods
0.000
abstract
1
239000013077
target material
Substances
0.000
abstract
1
Classifications
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
G03F1/48—Protective coatings
Abstract
1488184 Photomasks WESTERN ELECTRIC CO Inc 13 Feb 1975 [15 Feb 1974] 6228/75 Heading G2X [Also in Division H5] To provide a mask through which microminiature electronic wafers covered by a resist may be exposed in order to reproduce the mask pattern without the need for close contact to eliminate diffraction effects, a polyethylene terephthalate film 36 bonded to a frame 38, subsequently tightened by heating and coated with Au or Pt pattern 40 by e.g. conventional electron photolithography and ion beam milling, forms a shadow on the resist 48 covering wafer 46 in a low vacuum chamber into which 0À4-0À9 nm X-rays enter through a Be or Si window from a point source in a high vacuum chamber Fig. 1 (not shown). The film, absorbing not more than 50% of the X-rays, may be protected from damage by a sputtered B carbide or other X-ray transparent layer 42. To absorb continuous spectrum X-rays while passing characteristic radiation, layer 44 possibly incorporated with protective layer 42 may be selected according to the X-ray tube target material , e.g. Al, Si, Mo, Rh. For Rh Ld radiation 0À46 nm, PVDCPVC copolymer is suitable. The frame 38 should match wafer 46 in expansivity and sensivity to humidity. The resist 48 on the wafer, optionally spaced 50 from the mask, maybe polymethyl methacrylate or other organic material, predominant cross-linking or chain scission under irradiation giving respectively negative or positive resist characteristics on solvent removal of un- or depolymerized areas.
GB6228/75A
1974-02-15
1975-02-13
X-ray mask structures and methods for making the same
Expired
GB1488184A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US442921A
US3892973A
(en)
1974-02-15
1974-02-15
Mask structure for X-ray lithography
Publications (1)
Publication Number
Publication Date
GB1488184A
true
GB1488184A
(en)
1977-10-05
Family
ID=23758701
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB6228/75A
Expired
GB1488184A
(en)
1974-02-15
1975-02-13
X-ray mask structures and methods for making the same
Country Status (6)
Country
Link
US
(1)
US3892973A
(en)
JP
(1)
JPS5834933B2
(en)
CA
(1)
CA1010578A
(en)
DE
(1)
DE2506266A1
(en)
FR
(1)
FR2261622B1
(en)
GB
(1)
GB1488184A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2142159A
(en)
*
1983-05-31
1985-01-09
American Telephone & Telegraph
Correction of lithographic masks
Families Citing this family (40)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CA1009382A
(en)
*
1974-12-18
1977-04-26
Her Majesty In Right Of Canada As Represented By Atomic Energy Of Canada Limited
X-ray beam flattener
US3975252A
(en)
*
1975-03-14
1976-08-17
Bell Telephone Laboratories, Incorporated
High-resolution sputter etching
US3984680A
(en)
*
1975-10-14
1976-10-05
Massachusetts Institute Of Technology
Soft X-ray mask alignment system
US4037111A
(en)
*
1976-06-08
1977-07-19
Bell Telephone Laboratories, Incorporated
Mask structures for X-ray lithography
JPS5319765A
(en)
*
1976-08-06
1978-02-23
Matsushita Electric Ind Co Ltd
Irradiation method of x-rays
US4063812A
(en)
*
1976-08-12
1977-12-20
International Business Machines Corporation
Projection printing system with an improved mask configuration
JPS5375770A
(en)
*
1976-12-17
1978-07-05
Hitachi Ltd
X-ray copying mask
US4170512A
(en)
*
1977-05-26
1979-10-09
Massachusetts Institute Of Technology
Method of manufacture of a soft-X-ray mask
JPS5411677A
(en)
*
1977-06-27
1979-01-27
Rockwell International Corp
Mask used for fine line lithography and method of producing same
US4218503A
(en)
*
1977-12-02
1980-08-19
Rockwell International Corporation
X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
JPS5480097A
(en)
*
1977-12-09
1979-06-26
Nippon Telegr & Teleph Corp
Soft x-ray tube anti-cathode and its manufacture
US4171240A
(en)
*
1978-04-26
1979-10-16
Western Electric Company, Inc.
Method of removing a cured epoxy from a metal surface
US4171489A
(en)
*
1978-09-13
1979-10-16
Bell Telephone Laboratories, Incorporated
Radiation mask structure
US4536882A
(en)
*
1979-01-12
1985-08-20
Rockwell International Corporation
Embedded absorber X-ray mask and method for making same
US4254174A
(en)
*
1979-03-29
1981-03-03
Massachusetts Institute Of Technology
Supported membrane composite structure and its method of manufacture
US4253029A
(en)
*
1979-05-23
1981-02-24
Bell Telephone Laboratories, Incorporated
Mask structure for x-ray lithography
JPS5610928A
(en)
*
1979-07-07
1981-02-03
Shinetsu Sekiei Kk
Preparation of electronic device
US4260670A
(en)
*
1979-07-12
1981-04-07
Western Electric Company, Inc.
X-ray mask
US4301237A
(en)
*
1979-07-12
1981-11-17
Western Electric Co., Inc.
Method for exposing substrates to X-rays
US4246054A
(en)
*
1979-11-13
1981-01-20
The Perkin-Elmer Corporation
Polymer membranes for X-ray masks
US4536240A
(en)
*
1981-12-02
1985-08-20
Advanced Semiconductor Products, Inc.
Method of forming thin optical membranes
JPS58207635A
(en)
*
1982-05-28
1983-12-03
Seiko Epson Corp
Manufacture of membrane mask
US4522842A
(en)
*
1982-09-09
1985-06-11
At&T Bell Laboratories
Boron nitride X-ray masks with controlled stress
US4465759A
(en)
*
1983-02-14
1984-08-14
The Perkin-Elmer Corporation
Method of fabricating a pellicle cover for projection printing system
JPS6020547U
(en)
*
1983-07-21
1985-02-13
村田精版印刷株式会社
Paste correction sheet
DE3330806A1
(en)
*
1983-08-26
1985-03-14
Feinfocus Röntgensysteme GmbH, 3050 Wunstorf
X-ray lithography apparatus
US4579616A
(en)
*
1983-11-14
1986-04-01
The Perkin-Elmer Corporation
Method of fabrication of an optically flat membrane
US4534047A
(en)
*
1984-01-06
1985-08-06
The Perkin-Elmer Corporation
Mask ring assembly for X-ray lithography
US4610020A
(en)
*
1984-01-06
1986-09-02
The Perkin-Elmer Corporation
X-ray mask ring and apparatus for making same
US4539695A
(en)
*
1984-01-06
1985-09-03
The Perkin-Elmer Corporation
X-Ray lithography system
JPS60168145A
(en)
*
1984-02-13
1985-08-31
Nec Corp
X-ray exposing mask
DE3413374A1
(en)
*
1984-04-10
1985-10-17
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt
OPTICAL ADJUSTMENT PROCEDURE
DE3524196C3
(en)
*
1984-07-06
1994-08-04
Canon Kk
Lithography mask
US4608268A
(en)
*
1985-07-23
1986-08-26
Micronix Corporation
Process for making a mask used in x-ray photolithography
US4964146A
(en)
*
1985-07-31
1990-10-16
Hitachi, Ltd.
Pattern transistor mask and method of using the same
US4708919A
(en)
*
1985-08-02
1987-11-24
Micronix Corporation
Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
US4696878A
(en)
*
1985-08-02
1987-09-29
Micronix Corporation
Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask
JPH0682604B2
(en)
*
1987-08-04
1994-10-19
三菱電機株式会社
X-ray mask
KR930001852B1
(en)
*
1987-08-10
1993-03-15
이데미쯔세끼유가가꾸 가부시기가이샤
Durable patterning member
US6258491B1
(en)
1999-07-27
2001-07-10
Etec Systems, Inc.
Mask for high resolution optical lithography
Family Cites Families (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3743842A
(en)
*
1972-01-14
1973-07-03
Massachusetts Inst Technology
Soft x-ray lithographic apparatus and process
1974
1974-02-15
US
US442921A
patent/US3892973A/en
not_active
Expired – Lifetime
1974-11-18
CA
CA213,950A
patent/CA1010578A/en
not_active
Expired
1975
1975-02-13
GB
GB6228/75A
patent/GB1488184A/en
not_active
Expired
1975-02-14
FR
FR7504671A
patent/FR2261622B1/fr
not_active
Expired
1975-02-14
DE
DE19752506266
patent/DE2506266A1/en
not_active
Withdrawn
1975-02-15
JP
JP50018449A
patent/JPS5834933B2/en
not_active
Expired
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2142159A
(en)
*
1983-05-31
1985-01-09
American Telephone & Telegraph
Correction of lithographic masks
Also Published As
Publication number
Publication date
CA1010578A
(en)
1977-05-17
JPS5834933B2
(en)
1983-07-29
US3892973A
(en)
1975-07-01
FR2261622A1
(en)
1975-09-12
FR2261622B1
(en)
1977-04-15
DE2506266A1
(en)
1975-08-21
JPS50120270A
(en)
1975-09-20
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Legal Events
Date
Code
Title
Description
1978-02-15
PS
Patent sealed [section 19, patents act 1949]
1995-03-15
PE20
Patent expired after termination of 20 years
Effective date:
19950212
