GB1501245A – Gettering contaminants in monocrystalline silicon
– Google Patents
GB1501245A – Gettering contaminants in monocrystalline silicon
– Google Patents
Gettering contaminants in monocrystalline silicon
Info
Publication number
GB1501245A
GB1501245A
GB38901/75A
GB3890175A
GB1501245A
GB 1501245 A
GB1501245 A
GB 1501245A
GB 38901/75 A
GB38901/75 A
GB 38901/75A
GB 3890175 A
GB3890175 A
GB 3890175A
GB 1501245 A
GB1501245 A
GB 1501245A
Authority
GB
United Kingdom
Prior art keywords
annealing
porous
silicon
layer
porous silicon
Prior art date
1974-12-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38901/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1974-12-09
Filing date
1975-09-23
Publication date
1978-02-15
1975-09-23
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1978-02-15
Publication of GB1501245A
publication
Critical
patent/GB1501245A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000000356
contaminant
Substances
0.000
title
abstract
3
238000005247
gettering
Methods
0.000
title
abstract
2
229910021421
monocrystalline silicon
Inorganic materials
0.000
title
abstract
2
238000000137
annealing
Methods
0.000
abstract
5
229910021426
porous silicon
Inorganic materials
0.000
abstract
4
XKRFYHLGVUSROY-UHFFFAOYSA-N
Argon
Chemical compound
[Ar]
XKRFYHLGVUSROY-UHFFFAOYSA-N
0.000
abstract
2
IJGRMHOSHXDMSA-UHFFFAOYSA-N
Atomic nitrogen
Chemical compound
N#N
IJGRMHOSHXDMSA-UHFFFAOYSA-N
0.000
abstract
2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical group
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
2
239000007864
aqueous solution
Substances
0.000
abstract
1
229910052786
argon
Inorganic materials
0.000
abstract
1
239000002738
chelating agent
Substances
0.000
abstract
1
229910052802
copper
Inorganic materials
0.000
abstract
1
239000002019
doping agent
Substances
0.000
abstract
1
230000000694
effects
Effects
0.000
abstract
1
229910052737
gold
Inorganic materials
0.000
abstract
1
238000010438
heat treatment
Methods
0.000
abstract
1
239000001307
helium
Substances
0.000
abstract
1
229910052734
helium
Inorganic materials
0.000
abstract
1
SWQJXJOGLNCZEY-UHFFFAOYSA-N
helium atom
Chemical compound
[He]
SWQJXJOGLNCZEY-UHFFFAOYSA-N
0.000
abstract
1
229910052742
iron
Inorganic materials
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
230000000873
masking effect
Effects
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
229910052751
metal
Inorganic materials
0.000
abstract
1
238000001465
metallisation
Methods
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
229910052759
nickel
Inorganic materials
0.000
abstract
1
229910052757
nitrogen
Inorganic materials
0.000
abstract
1
230000003647
oxidation
Effects
0.000
abstract
1
238000007254
oxidation reaction
Methods
0.000
abstract
1
230000001590
oxidative effect
Effects
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
229910052710
silicon
Inorganic materials
0.000
abstract
1
239000010703
silicon
Substances
0.000
abstract
1
239000000377
silicon dioxide
Substances
0.000
abstract
1
239000007787
solid
Substances
0.000
abstract
1
239000000243
solution
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02002—Preparing wafers
H01L21/02005—Preparing bulk and homogeneous wafers
H01L21/02008—Multistep processes
H01L21/0201—Specific process step
H01L21/02016—Backside treatment
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02002—Preparing wafers
H01L21/02005—Preparing bulk and homogeneous wafers
H01L21/0203—Making porous regions on the surface
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/314—Inorganic layers
H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/015—Capping layer
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/024—Defect control-gettering and annealing
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/037—Diffusion-deposition
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/06—Gettering
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/085—Isolated-integrated
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/117—Oxidation, selective
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/118—Oxide films
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/122—Polycrystalline
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/914—Doping
Y10S438/923—Diffusion through a layer
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/96—Porous semiconductor
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
Abstract
1501245 Semi-conductor device manufacture INTERNATIONAL BUSINESS MACHINES CORP 23 Sept 1975 [9 Dec 1974] 38901/75 Heading H1K The fast diffusing metal contaminants Au, Cu, Fe and Ni are gettered from a monocrystalline silicon body by anodically treating the body in an aqueous solution to form a region of porous silicon on at least one surface and then annealing in a non-oxidizing atmosphere to drive the contaminants to the porous region. Preferably the anodic treatment is in a 25% aqueous HF solution and produces a layer of 56% porosity 8 Á thick and the annealing effected by heating in nitrogen, argon, or helium, e.g. at 1000 C. for 1 hour. The gettering effect can be enhanced by introducing a dopant into the body via the porous layer to a concentration exceeding the solid solubility limit prior to annealing. After annealing the porous silicon is either covered with a layer of pyrolytic silica or removed by an HF etch containing a chelating agent. In one method the anodic treatment is restricted by oxide masking so that the porous silicon forms a pattern of closed figures. A silicon layer formed over the patterned surface after annealing and oxidation of the porous silicon thus has polycrystalline regions, in register with the porous regions, which are oxidized to mutually isolate devices formed in the remaining monocrystalline parts of the layers and to carry interconnecting layers of metallization.
GB38901/75A
1974-12-09
1975-09-23
Gettering contaminants in monocrystalline silicon
Expired
GB1501245A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US530910A
US3929529A
(en)
1974-12-09
1974-12-09
Method for gettering contaminants in monocrystalline silicon
Publications (1)
Publication Number
Publication Date
GB1501245A
true
GB1501245A
(en)
1978-02-15
Family
ID=24115488
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB38901/75A
Expired
GB1501245A
(en)
1974-12-09
1975-09-23
Gettering contaminants in monocrystalline silicon
Country Status (7)
Country
Link
US
(1)
US3929529A
(en)
JP
(1)
JPS5238389B2
(en)
CA
(1)
CA1039629A
(en)
DE
(1)
DE2544736C2
(en)
FR
(1)
FR2294545A1
(en)
GB
(1)
GB1501245A
(en)
IT
(1)
IT1051018B
(en)
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シャープ株式会社
Method for manufacturing silicon substrate and method for manufacturing solar cell
US7657390B2
(en)
*
2005-11-02
2010-02-02
Applied Materials, Inc.
Reclaiming substrates having defects and contaminants
JP2009260313A
(en)
*
2008-03-26
2009-11-05
Semiconductor Energy Lab Co Ltd
Method for manufacturing soi substrate, and method for manufacturing semiconductor device
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Publication number
Priority date
Publication date
Assignee
Title
US2462218A
(en)
*
1945-04-17
1949-02-22
Bell Telephone Labor Inc
Electrical translator and method of making it
US2739882A
(en)
*
1954-02-25
1956-03-27
Raytheon Mfg Co
Surface treatment of germanium
US2948642A
(en)
*
1959-05-08
1960-08-09
Bell Telephone Labor Inc
Surface treatment of silicon devices
GB1209914A
(en)
*
1967-03-29
1970-10-21
Marconi Co Ltd
Improvements in or relating to semi-conductor devices
JPS501513B1
(en)
*
1968-12-11
1975-01-18
CH494591A
(en)
*
1969-04-09
1970-08-15
Transistor Ag
Process for the production of semiconductor elements with a certain lifetime of the charge carriers
US3627647A
(en)
*
1969-05-19
1971-12-14
Cogar Corp
Fabrication method for semiconductor devices
US3579815A
(en)
*
1969-08-20
1971-05-25
Gen Electric
Process for wafer fabrication of high blocking voltage silicon elements
US3640806A
(en)
*
1970-01-05
1972-02-08
Nippon Telegraph & Telephone
Semiconductor device and method of producing the same
US3775262A
(en)
*
1972-02-09
1973-11-27
Ncr
Method of making insulated gate field effect transistor
FR2191272A1
(en)
*
1972-06-27
1974-02-01
Ibm France
1974
1974-12-09
US
US530910A
patent/US3929529A/en
not_active
Expired – Lifetime
1975
1975-09-23
GB
GB38901/75A
patent/GB1501245A/en
not_active
Expired
1975-10-07
DE
DE2544736A
patent/DE2544736C2/en
not_active
Expired
1975-10-13
FR
FR7532211A
patent/FR2294545A1/en
active
Granted
1975-11-03
CA
CA239,201A
patent/CA1039629A/en
not_active
Expired
1975-11-19
JP
JP50138290A
patent/JPS5238389B2/ja
not_active
Expired
1975-12-02
IT
IT29891/75A
patent/IT1051018B/en
active
Also Published As
Publication number
Publication date
IT1051018B
(en)
1981-04-21
JPS5238389B2
(en)
1977-09-28
CA1039629A
(en)
1978-10-03
JPS5175381A
(en)
1976-06-29
DE2544736A1
(en)
1976-06-10
FR2294545A1
(en)
1976-07-09
US3929529A
(en)
1975-12-30
FR2294545B1
(en)
1977-12-16
DE2544736C2
(en)
1983-07-21
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Legal Events
Date
Code
Title
Description
1978-06-28
PS
Patent sealed [section 19, patents act 1949]
1987-05-13
PCNP
Patent ceased through non-payment of renewal fee
