GB1506478A – Semiconductor switching device
– Google Patents
GB1506478A – Semiconductor switching device
– Google Patents
Semiconductor switching device
Info
Publication number
GB1506478A
GB1506478A
GB4784175A
GB4784175A
GB1506478A
GB 1506478 A
GB1506478 A
GB 1506478A
GB 4784175 A
GB4784175 A
GB 4784175A
GB 4784175 A
GB4784175 A
GB 4784175A
GB 1506478 A
GB1506478 A
GB 1506478A
Authority
GB
United Kingdom
Prior art keywords
region
additional
base
additional region
direct contact
Prior art date
1975-11-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4784175A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BELENKOV N
MALITSKY E
Original Assignee
BELENKOV N
MALITSKY E
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1975-11-20
Filing date
1975-11-20
Publication date
1978-04-05
1975-11-20
Application filed by BELENKOV N, MALITSKY E
filed
Critical
BELENKOV N
1975-11-20
Priority to GB4784175A
priority
Critical
patent/GB1506478A/en
1978-04-05
Publication of GB1506478A
publication
Critical
patent/GB1506478A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
2
238000012986
modification
Methods
0.000
abstract
2
230000004048
modification
Effects
0.000
abstract
2
230000015556
catabolic process
Effects
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
229910021332
silicide
Inorganic materials
0.000
abstract
1
FVBUAEGBCNSCDD-UHFFFAOYSA-N
silicide(4-)
Chemical compound
[Si-4]
FVBUAEGBCNSCDD-UHFFFAOYSA-N
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/861—Diodes
H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/1012—Base regions of thyristors
H01L29/102—Cathode base regions of thyristors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
H01L29/747—Bidirectional devices, e.g. triacs
Abstract
1506478 Semiconductor devices NMBELENKOV A I KURNOSOV and E E MALITSKY 20 Nov 1975 47841/75 Heading H1K The switching voltage of a PNPN switching diode is determined by the breakdown of a PN junction 14 between one of the base regions 3 and an additional region 5 of the opposite conducting type to the region 3, the additional region 5 being located wholly within, and being of smaller area than the bottom surface of, a recess 6 in the upper device surface, and being electrically connected to the other base region 2. Such electrical connection may be provided, as shown in Fig. 1, by means of a conductive path 9 between the two regions or, as shown in Fig. 3, by a direct contact between the base region 2 and part of the additional region 5 Various alternative configurations for providing this direct contact are disclosed. In a modification of the Fig. 3 device a second additional region (18), Fig. 8 (not shown), of the same conductivity type as but more heavily doped than the base region (3) is provided in the surface of the region (3) between the emitter region (4) and the first additional region (5). In another modification a layer (19) Fig. 9 (not shown) of a negative-temperature-coefficient metal silicide is deposited on the base region (3) between and spaced from the emitter region (4) and additional region (5). This compensates for the positive temperature coefficient of the switching voltage. Fig. 10 shows the application of the invention to a 5-layer symmetrical switching diode. The manufacture of the various embodiments using conventional materials and techniques is described.
GB4784175A
1975-11-20
1975-11-20
Semiconductor switching device
Expired
GB1506478A
(en)
Priority Applications (1)
Application Number
Priority Date
Filing Date
Title
GB4784175A
GB1506478A
(en)
1975-11-20
1975-11-20
Semiconductor switching device
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB4784175A
GB1506478A
(en)
1975-11-20
1975-11-20
Semiconductor switching device
Publications (1)
Publication Number
Publication Date
GB1506478A
true
GB1506478A
(en)
1978-04-05
Family
ID=10446436
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4784175A
Expired
GB1506478A
(en)
1975-11-20
1975-11-20
Semiconductor switching device
Country Status (1)
Country
Link
GB
(1)
GB1506478A
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2963984A1
(en)
*
2010-08-17
2012-02-24
St Microelectronics Tours Sas
SHOCKLEY DIODE WITH LOW TENSION VOLTAGE
1975
1975-11-20
GB
GB4784175A
patent/GB1506478A/en
not_active
Expired
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2963984A1
(en)
*
2010-08-17
2012-02-24
St Microelectronics Tours Sas
SHOCKLEY DIODE WITH LOW TENSION VOLTAGE
US8704270B2
(en)
2010-08-17
2014-04-22
Stmicroelectronics (Tours) Sas
Shockley diode having a low turn-on voltage
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Legal Events
Date
Code
Title
Description
1978-08-16
PS
Patent sealed
1981-07-08
PCNP
Patent ceased through non-payment of renewal fee
