GB1566886A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1566886A – Semiconductor devices
– Google Patents

GB1566886A – Semiconductor devices
– Google Patents
Semiconductor devices

Download PDF
Info

Publication number
GB1566886A

GB1566886A
GB51747/76A
GB5174776A
GB1566886A
GB 1566886 A
GB1566886 A
GB 1566886A
GB 51747/76 A
GB51747/76 A
GB 51747/76A
GB 5174776 A
GB5174776 A
GB 5174776A
GB 1566886 A
GB1566886 A
GB 1566886A
Authority
GB
United Kingdom
Prior art keywords
substrate
layer
conductivity
type
protective layer
Prior art date
1975-12-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB51747/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Societe Anonyme de Telecommunications SAT

Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1975-12-23
Filing date
1976-12-10
Publication date
1980-05-08

1976-12-10
Application filed by Societe Anonyme de Telecommunications SAT
filed
Critical
Societe Anonyme de Telecommunications SAT

1980-05-08
Publication of GB1566886A
publication
Critical
patent/GB1566886A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors

H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation

H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier

H01L31/103—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type

H01L31/1032—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials

H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions

H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies

H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material

H01L31/0264—Inorganic materials

H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe

Description

PATENT SPECIFICATION ( 11)
( 21) Application No 51747/76 ( 22) Filed 10 Dec 1976 ( 1 ‘ ( 31) Convention Application No 7539500 ( 32) Filed 23 Dec 1975 in ( 33) ( 44) France (FR) Complete Specification Published 8 May 1980 ( 51) INT CL 3 H Ol L 31/06 ( 52) Index at Acceptance H 1 K l EB 2 R 3 E 2512 251 E 2523 255 5 B 2 BX 9 M 1 9 M 2 9 N 2 9 N 3 9 R 2 EBC ( 54) IMPROVEMENTS IN OR RELATING TO SEMICONDUCTOR DEVICES ( 71) We, SOC It Tt ANONYME DE TELECOMMUNICATIONS, A French Body Corporate, of 41 rue Cantagrel, 75624 Paris, Cedex 13, France, do hereby declare the invention, for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the follow-
ing statement:-
This invention relates to a semiconductor device of the planar kind comprising a substrate made of a semi-conducting material having a first kind of conductivity, a reion having a second type of conductivity being formed in the substrate and constituting a PN junction with the first type region.
The invention also relates to a method of constructing such a device.
More particularly, the invention relates to a semi-conductor device intended inter alia for use as a photo-voltaic detector, in which the substrate is in the form of a mixed crystal of two constituent binary compounds with a common element, the constituent compounds having different forbidden band widths and the width of the forbidden band of the mixed crystal being dependent on the relative proportions of the two constituents in the alloy The two constituent compounds may, for example, be cadmium telluride and mercury telluride, the substrate being a semiconducting material having the formula Cd&Hg J Te, where x is a non-zero number less than 1.
Photovoltaic detectors comprising a substrate material having the formula Cd.Hg 1 Te are of use inter alia in detecting infrared radiation They are generally made from a P-type substrate into the surface of which an impurity such as mercury is diffused, so as to produce an N-type surface region of the substrate and thus form a PN junction The sensitive surface of a detector of this kind is the surface of the substrate into which the impurity has been diffused A method of constructing such a detector is described e g in U K Patent Specification
1191171.
In most applications of photovoltaic detectors, more particularly in the infrared, it is important for the sensitivity to be high.
French Patent Specification 2281650 filed on
6 August 1974 in the name of the Applicants describes a method for improving the sensitivity of such detectors.
The method has been used to obtain a detector of the aforementioned kind comprising a transition layer whereby the electrical and mechanical characteristics of the photovoltaic detector can be improved.
According to the invention, there is provided a semiconductor device comprising a substrate made of a semiconducting material having a first type of conductivity and in the form of a mixed crystal of two constituent binary compounds with a common element, the constituent compounds having different forbidden band widths with the width of the forbidden band of the mixed crystal being dependent on the relative proportions of the two constituent compounds, a region having a second type of conductivity being formed in the substrate at an outer surface of the substrate and forming a PN junction with the material of the first type of conductivity, which device comprises a protective layer on the outer surface of the substrate covering at least a major part of the said region of the second type of conductivity, such protective layer consisting at least mainly of that one of the constituents compounds which has the larger forbidden band width.
More particularly in its preferred application the invention provides a semiconductor device comprising a substrate material having the formula Cdf Hgl Te, where x is a non-zero number less than 1, the protective layer consisting at least mainly of cadmium telluride Cd Te.
1 566 886 1 566 886 The cadmium telluride (Cd Te) adheres in satisfactory manner to the substrate; it protects the surface of the device during manufacture and operation; finally, when the device is a photovoltaic detector sensitive to infrared radiation having a wavelength of the order of 10 lt (x being of the order of 0 4), the surface Cd Te layer does not affect the performance of the detector, since it is transparent to radiation up to a wavelength of 15 AI In the case where the substrate is P-type, the region is N-type and is preferably doped with a doping agent such as mercury or indium.
In another aspect, the invention provides a method of constructing a semiconductor device, including: providing a substrate of a semiconducting material having a first type of conductivity and in the form of a mixed crystal composed of two constituent binary compounds having a common element and different forbidden band widths with the width of the forbidden band of the mixed crystal being dependent on the relative proportions of the two constituent compounds in the mixed crystal; and forming a region having a second type of conductivity by diffusion of a doping agent into the substrate at an outer surface of the substrate so that the said region forms a PN junction with the material of the first type of conductivity; in which device the outer surface of the substrate is provided with a protective layer consisting at least mainly of that one of the constituent compounds which has the larger forbidden band width, and the doping agent is diffused into the substrate through the protective layer.
Thus the said substrate outer surface (which forms a sensitive surface in the case where the semiconducting device is a photovoltaic detector) is protected both during the diffusion of the doping agent and during subsequent use of the semiconducting device.
In order that the invention may be readily understood, embodiments thereof will now be described, by way of example with reference to the accompanying drawings, in which:
Figures 1 through 7 diagrammatically illustrate the various steps in the construction of a photovoltaic detector embodying the invention; and Figure 8 shows another embodiment of the dectector.
The example which will now be described with reference to Figures 1 7 relates to a photovoltaic detector having a substrate consisting of a mixed crystal having the formula Cdl Hg 1 Te In this formula, x is a non-zero number smaller than 1 and preferably less than 0 4.
As shown in Figure 1, substrate 1 is P-type A transition layer 2 of the kind described in the aforementioned French Patent Specification 2281650 is deposited on the main surface la of the substrate Layer 2 is a layer of cadmium telluride Cd Te which is deposited by any known method such as cathodic atomization or evaporation in vacuo As likewise described in the aforementioned French Patent Specification, a masking layer 3 (Figure 2) is deposited on layer 2 The masking layer is made of an insulating material which does not react with the constituents and doping agents in the device In the example, the material of the masking layer is zinc sulphide Zn S Alternatively, layer 3 can be made of silicon dioxide Si O 2, silicon monoxide Si O, or silicon nitride Si 3 N 4.
Next, the element shown in Figure 2 is heat-treated at a temperature between C and 400 C, for at least 1 hour at 400 C and 15 hours at 200 C The heat-treatment is to produce a layer 2 having a gradually varying composition As described in French Patent Specification 2281650, the heat-treatment results in recrystallization of layer 2 and also yields a layer having a composition which varies continuously between the substrate and the masking layer.
Near substrate 1, the composition of layer 2 is substantially the same as that of the substrate, whereas the interface with the masking layer is made of pure cadmium telluride.
After the heat-treatment, at least one aperture or «window» 10 (Figure 3) is made in layers 2 and 3 so as to expose part of the surface la of substrate 1 A doping agent is diffused through the aperture so as to dope substrate 1 over part of surface la and form a PN junction.
According to the invention, a layer 4 (Figure 4) of cadmium telluride is deposited at least in aperture 10 In the example illustrated in Figures 1 7, layer 4 also covers the masking layer 3 Layer 4 can be deposited by any known method such as evaporation in vacuo or cathodic atomization Layer 4, which will hereinafter be called the -protective layer», adheres in satisfactory manner to the surface la of substrate 1 and to the edges 10 a of aperture 10.
The protective layer 4 fulfils various functions Firstly, as will be seen hereinafter in connection with Figure 5, layer 4 in aperture 10 protects surface la of substrate 1 when mercury is diffused into the substrate to form an N-type region The layer does not prevent diffusion, since experiments carried out in connection with the invention have shown that the diffusion coefficient of mercury through the Cd Te layer 4 is sufficiently high, during doping of the substrate by mercury, for the layer not to interfere with doping, provided the layer 1 566 886 is not too thick The preferred method of doping is diffusion of mercury at elevated temperature, preferably above 300 C At lower temperatures, inter alia at ambient temperature under normal operating and storage conditions, the layer of cadmium telluride is practically impermeable to mercury.
This property of protecting surface la during diffusion of mercury in substrate 1 is particularly important It has been found that, when mercury is directly diffused over the free surface of the substrate, it produces a deterioration of the surface The deterioration of the surface (which is the sensitive surface of the photovoltaic detector) has a number of disadvantages; more particularly it results in surface recombination currents which reduce the inverse impe201 dance of the resulting photodiode In addition, the poor surface results in considerable optical absorption and thus reduces the sensitivity of the detector, inter alia its quantum yield (i e the ratio of the number of electric charges produced by radiation to the number of photons supplied by the radiation) Finally, the photodiode has a relatively low breakdown voltage If a layer 4 is deposited on the substrate before diffusion of mercury surface la is protected and remains undamaged so that the detector has considerably improved sensitivity.
In addition, the Cd Te layer 4 is transparent to infrared radiation up to a wavelength t 35 of about 15 microns.
It has also been found that, at the surface, the mercury has no action on cadmium telluride Accordingly the state of the outer surface of layer 4 remains satisfactory the 0 optical absorption of incident radiation is low, and the detector has a high quantum yield.
Layer 4 also protects surface la and the junction during a subsequent metallization operation, which will be described hereinafter with reference to Figure 7 Finally as a result of layer 4, the junction can be produced at a low level in the substrate and -the mercury can be diffused more slowly than in the absence of layer 4 Consequently, manufacture of the junction can be more easily controlled.
As shown in Figure 5, after the Cd Te layer 4 has been produced the mercury (indicated by arrow 5 in Figure 5) is diffused in aperture 10 through layer 4 As already stated above this diffusion stage is carried out at a high temperature, of at least 3 000 C.
The diffusion is carried out in a sealed glass bulb (not shown) in the presence of mercury in the liquid phase (deposited on the outer surface of layer 4) or in the gaseous phase, by heating the bulb to 30 WC for about half an hour.
After the mercury diffusion stage an N-type region 6 exists in the substrate and extends over a larger area than aperture 10.
The N-type region 6 forms a PN junction 7 with the P-type substrate.
As shown in Figure 6, the production of region 6 is followed by the formation of at least one aperture 8 in layer 4 above region 6 for the output electrical contact of the photovoltaic detector Aperture 8 is made e.g by chemical erosion of layer 4 by a very dilute solution of bromine and ethanol The solution erodes the Cd Te layer 4 at a predetermined speed; consequently the erosion time can be limited so that only the required portion of layer 4 is removed and layer 6 is left intact.
The last operation, shown in Figure 7, consists in filling the aperture (or apertures) 8 with a metal such as chromium or gold, thus obtaining a metal contact 9 which adheres to a part of surface la which constitutes a boundary of the N-type region 6 The metal contact 9 extends above layer 4 in order to provide the necessary electric contacts with an electrical measuring circuit containing the photovoltaic detector.
Note that, as a result of the presence of layer 4, it may be unnecessary to deposit an additional protective layer e g of zinc sulphide which is normally necessary when similar contacts are made without providing a cadmium telluride layer 4 During metallization layer 4 protects both surface la and the edges of the junction since layer 4, like layers 2 and 3, covers the edges of the junction, which is therefore not disturbed after its production.
In a particular embodiment of a detector of the kind described, use was made of a wafer of a Cd Hg,, Te mixed crystal in which x = O 2 the surface of the wafer being of the order of 300 mm 2 and having a concentration of doping impurity atoms of i 107 atoms/cm 3 Next, a Cd Te layer 2 having a thickness of 3 000 A was deposited, followed by a zinc sulphide Zn S masking layer 3 likewise having a thickness of 3 000 A About 3000 apertures 10 were formed in the wafer, each aperture having an area of 10-2 mm 2 ( 100 li x 100 A) Finally a Cd Te layer 4 having a thickness of 3000 A was formed and mercury was diffused for about half an hour Under these conditions, the N-type region 6 had a carrier concentration of 101 ‘ atoms/cm 3 The resulting detector was found to have a quantum yield of about % whereas the corresponding yield was of about 25 % when there was no Cd Te layer 4.
Figure 8 illustrates a variant of the method according to the invention In this variant the Cd Te layer 2 a is first formed on the free surface la of P-type substrate 1.
Next, as Zn S masking layer 3 a is deposited on layer 2 a An aperture l Ob is formed in layer 3 a leaving layer 2 a intact Finally, 1 566 886 mercury is diffused into substrate 1 through layer 2 a so as to form an N-type region 6 a.
This method is simpler than the process described previously in connection with Figures 1 7 However lateral diffusion, which may cause difficulty, is not eliminated in such a satisfactory manner as when a layer 4 is provided and covers layer 3 in addition to the surface la above the region 6 to be formed.
The device and the method described in relation to Figures 1 8 can be varied in numerous ways For example, the doping agent may be indium instead of mercury.
Although the heat treatment in the first embodiment was carried out before aperture 10 and layer 4 were formed, it could be performed after the formation of layer 4 and before the diffusion of the doping agent.
Preferably, the thickness of layer 4 (or 2 a) is between 500 and 5 OOOA.
As already stated, the device and the method according to the invention have numerous advantages In addition to those already mentioned, inter alia protection of the device during the various steps in its manufacture, layer 4 (or 2 a) can be used to reduce the number of operations required for manufacturing the detector.

Claims (16)

WHAT WE CLAIM IS:-

1 A semiconductor device comprising a substrate made of a semiconducting material having a first type of conductivity and in the form of a mixed crystal of two constituent binary compounds with a common element, the constituent compounds having different forbidden band widths with the width of the forbidden band of the mixed crystal being dependent on the relative proportions of the two constituent compounds, a region having a second type of conductivity being formed in the substrate at an outer surface of the substrate and forming a PN junction with the material of the first type of conductivity, which device comprises a protective layer on the outer surface of the substrate covering at least a major part of the said region of the second type of conductivity, such protective layer consisting at least mainly of that one of the constituent compounds which has the larger forbidden band width.

2 A device according to Claim 1, wherein the substrate material has the formula Cdx Hg,, Te where x is a non zero number less than 1 and wherein the protective layer consists at least mainly of cadmium telluride (Cd Te).

3 A device according to claim 2 wherein the substrate has P-type conductivity and the said region of the second type of conductivity is doped with a doping agent and has N-type conductivity.

4 A device according to Claim 3, wherein the doping agent is mercury.

A device according to Claim 3, wherein the doping agent is indium.

6 A device according to any one of Claims 2 to 5, wherein an aperture is formed in the protective layer over the region having the second type of conductivity, metal being deposited in the aperture and extending above the protective layer.

7 A device according to any one of claims 2 to 6, wherein the thickness of the protective layer is between 500 and 5,00 () A.

8 A device according to any one of claims 2 to 7, comprising a second layer on surface regions of the substrate having the first type of conductivity, the second layer being made of material consisting mainly of cadmium telluride.

9 A device according to claim 8, comprising a masking layer of insulating material over the second layer.

A device according to claim 8 or 9, wherein the second layer covers a part of the junction which is level with the outer surface of the substrate.

11 A device according to claim 8, wherein the protective layer and the second layer form a single layer on the outer surface of the substrate.

12 A method of constructing a semiconductor device, including: providing a substrate of a semiconducting material having a first type of conductivity and in the form of a mixed crystal composed of two constituent binary compounds having a common element and different forbidden band widths with the width of the forbidden band of the mixed crystal being dependent on the relative proportions of the two constituent compounds in the mixed crystal; nd forming a region having a second type of conductivity by diffusion of a doping agent into the substrate at an outer surface of the substrate so that the said region forms a PN junction with the material of the first type of conductivity; in which device the outer surface of the substrate is provided with a protective layer consisting at least mainly of that one of the constituent compounds which has the larger forbidden band width, and the doping agent is diffused into the substrate through the protective layer.

13 A method according to claim 12, wherein the substrate material has the formula Cd Hg 1,Te and the protective layer is cadmium telluride.

14 A method according to claim 13 wherein the protective layer is deposited by cathodic atomization.

A method according to claim 13, wherein the protective layer is deposited by evaporation in a vacuum.

16 A semiconductor device substantially as hereinbefore described with reference to Figures 1 to 7 or Figure 8 of the accompanying drawings.
1 566 886 5 17 A method of constructing a semiconductor device substantially as hereinbefore described with reference to Figures 1 to 7 or Figure 8 of the accompanying drawings.
FORRESTER, KETLEY & CO, Chartered Patent Agents, Forrester House, 52 Bounds Green Road, London Nll 2 EY.
and also at Rutland House, 148 Edmund St, Birmingham B 3 2 LD.
Agents for the Applicants.
and also at Scottish Provident Building, 29 St Vincent Place, GLASGOW G 1 2 DT.
Printed for Her Majesty’s Stationery Office, by Croydon Printing Company Limited, Croydon, Surrey, 1980.
Published by The Patent Office, 25 Southampton Buildings, London, WC 2 A l AY, from which copies may be obtained.

GB51747/76A
1975-12-23
1976-12-10
Semiconductor devices

Expired

GB1566886A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

FR7539500A

FR2336804A1
(en)

1975-12-23
1975-12-23

IMPROVEMENTS MADE TO SEMICONDUCTOR DEVICES, ESPECIALLY TO PHOTOVOLTAIC DETECTORS INCLUDING A SUBSTRATE BASED ON A CDXHG1-XTE ALLOY, AND PROCESS FOR MANUFACTURING SUCH A PERFECTED DEVICE

Publications (1)

Publication Number
Publication Date

GB1566886A
true

GB1566886A
(en)

1980-05-08

Family
ID=9164076
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB51747/76A
Expired

GB1566886A
(en)

1975-12-23
1976-12-10
Semiconductor devices

Country Status (6)

Country
Link

US
(1)

US4132999A
(en)

JP
(1)

JPS5279893A
(en)

DE
(2)

DE2660229C2
(en)

FR
(1)

FR2336804A1
(en)

GB
(1)

GB1566886A
(en)

NL
(1)

NL163905C
(en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4206003A
(en)

1977-07-05
1980-06-03
Honeywell Inc.
Method of forming a mercury cadmium telluride photodiode

US4286278A
(en)

1977-09-01
1981-08-25
Honeywell Inc.
Hybrid mosaic IR/CCD focal plane

IT1088411B
(en)

1977-12-06
1985-06-10
Cise Spa

PROCEDURE FOR RELATIONSHIP OF MULTISPETTRAL DETECTORS FOR INFRARED

JPS575325A
(en)

1980-06-12
1982-01-12
Junichi Nishizawa
Semicondoctor p-n junction device and manufacture thereof

FR2488048A1
(en)

1980-07-30
1982-02-05
Telecommunications Sa

SENSITIVE PHOTOVOLTAIC DETECTOR IN NEAR INFRARED

DE3033457C2
(en)

1980-09-05
1986-05-15
N.V. Philips’ Gloeilampenfabrieken, Eindhoven

A method of manufacturing a PN junction infrared detector array

FR2492171A1
(en)

1980-10-10
1982-04-16
Philips Nv
Infrared radiation detector mfr. – involves diffusing mercury into mercury cadmium telluride body to form N-type layer at operating temp.

FR2501915A1
(en)

1981-03-10
1982-09-17
Telecommunications Sa

SENSITIVE PHOTODETECTOR IN NEAR INFRA-RED

EP0068652B1
(en)

1981-06-24
1988-05-25
The Secretary of State for Defence in Her Britannic Majesty’s Government of the United Kingdom of Great Britain and
Photo diodes

EP0090669A3
(en)

1982-03-31
1990-12-19
Honeywell Inc.
Electromagnetic radiation detector

US5004698A
(en)

1985-12-05
1991-04-02
Santa Barbara Research Center
Method of making photodetector with P layer covered by N layer

US5182217A
(en)

1985-12-05
1993-01-26
Santa Barbara Research Center
Method of fabricating a trapping-mode

US5079610A
(en)

1985-12-05
1992-01-07
Santa Barbara Research Center
Structure and method of fabricating a trapping-mode

US4914495A
(en)

1985-12-05
1990-04-03
Santa Barbara Research Center
Photodetector with player covered by N layer

US4736104A
(en)

1986-02-07
1988-04-05
Texas Instruments Incorporated
Selenidization passivation

US4726885A
(en)

1986-02-07
1988-02-23
Texas Instruments Incorporated
Selenidization passivation

US4731640A
(en)

1986-05-20
1988-03-15
Westinghouse Electric Corp.
High resistance photoconductor structure for multi-element infrared detector arrays

DE3743288A1
(en)

1986-12-30
2015-06-18
Société Anonyme de Télécommunications

Bispectral electromagnetic radiation receiving device

US4885619A
(en)

1987-08-24
1989-12-05
Santa Barbara Research Center
HgCdTe MIS device having a CdTe heterojunction

JP2798927B2
(en)

1988-03-28
1998-09-17
株式会社東芝

Semiconductor light receiving device and method of manufacturing the same

US5936268A
(en)

1988-03-29
1999-08-10
Raytheon Company
Epitaxial passivation of group II-VI infrared photodetectors

US4956304A
(en)

1988-04-07
1990-09-11
Santa Barbara Research Center
Buried junction infrared photodetector process

US5880510A
(en)

1988-05-11
1999-03-09
Raytheon Company
Graded layer passivation of group II-VI infrared photodetectors

US4961098A
(en)

1989-07-03
1990-10-02
Santa Barbara Research Center
Heterojunction photodiode array

US5049962A
(en)

1990-03-07
1991-09-17
Santa Barbara Research Center
Control of optical crosstalk between adjacent photodetecting regions

US5192695A
(en)

1991-07-09
1993-03-09
Fermionics Corporation
Method of making an infrared detector

EP0635892B1
(en)

1992-07-21
2002-06-26
Raytheon Company
Bake-stable HgCdTe photodetector and method for fabricating same

US5296384A
(en)

1992-07-21
1994-03-22
Santa Barbara Research Center
Bake-stable HgCdTe photodetector and method for fabricating same

US5279974A
(en)

1992-07-24
1994-01-18
Santa Barbara Research Center
Planar PV HgCdTe DLHJ fabricated by selective cap layer growth

JP5135651B2
(en)

2001-05-15
2013-02-06
株式会社アクロラド

Semiconductor radiation detector

FR2865102B1
(en)

2004-01-19
2006-04-07
Michel Evin

SOIL WORKING MACHINE, TYPE DECHAUMEUSE

US20110146788A1
(en)

2009-12-23
2011-06-23
General Electric Company
Photovoltaic cell

CN104576335A
(en)

2015-01-21
2015-04-29
中国科学院上海技术物理研究所
Composite mask for high-energy ion implantation

CN104616974B
(en)

2015-01-21
2017-06-27
中国科学院上海技术物理研究所
A kind of minimizing technology of the compound mask for energetic ion injection

Family Cites Families (6)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3496024A
(en)

1961-10-09
1970-02-17
Monsanto Co
Photovoltaic cell with a graded energy gap

DE1261486B
(en)

1964-07-31
1968-02-22
Ibm Deutschland

Method for n-doping defined areas of semiconductor bodies

FR2168934B1
(en)

1972-01-27
1977-04-01
Telecommunications Sa

JPS499186A
(en)

1972-05-11
1974-01-26

US3949223A
(en)

1973-11-01
1976-04-06
Honeywell Inc.
Monolithic photoconductive detector array

FR2281650A1
(en)

1974-08-06
1976-03-05
Telecommunications Sa

PROCESS FOR MANUFACTURING A PHOTODIODE SENSITIVE TO INFRARED RADIATION AND PHOTODIODE OBTAINED BY THIS PROCESS

1975

1975-12-23
FR
FR7539500A
patent/FR2336804A1/en
active
Granted

1976

1976-12-01
DE
DE2660229A
patent/DE2660229C2/en
not_active
Expired

1976-12-01
DE
DE2654429A
patent/DE2654429C2/en
not_active
Expired

1976-12-01
US
US05/746,489
patent/US4132999A/en
not_active
Expired – Lifetime

1976-12-10
GB
GB51747/76A
patent/GB1566886A/en
not_active
Expired

1976-12-17
JP
JP51150983A
patent/JPS5279893A/en
active
Granted

1976-12-22
NL
NL7614249.A
patent/NL163905C/en
not_active
IP Right Cessation

Also Published As

Publication number
Publication date

NL163905B
(en)

1980-05-16

US4132999A
(en)

1979-01-02

FR2336804B1
(en)

1978-06-30

NL163905C
(en)

1980-10-15

DE2654429A1
(en)

1977-07-14

FR2336804A1
(en)

1977-07-22

NL7614249A
(en)

1977-06-27

JPS5433116B2
(en)

1979-10-18

JPS5279893A
(en)

1977-07-05

DE2660229C2
(en)

1986-07-24

DE2654429C2
(en)

1984-07-19

Información de contacto