GB1572667A - Creación de Inventos y Patentes con Inteligencia Artificial

GB1572667A – Integrated circuits
– Google Patents

GB1572667A – Integrated circuits
– Google Patents
Integrated circuits

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Publication number
GB1572667A

GB1572667A
GB20809/77A
GB2080977A
GB1572667A
GB 1572667 A
GB1572667 A
GB 1572667A
GB 20809/77 A
GB20809/77 A
GB 20809/77A
GB 2080977 A
GB2080977 A
GB 2080977A
GB 1572667 A
GB1572667 A
GB 1572667A
Authority
GB
United Kingdom
Prior art keywords
wafer
gratings
solid state
laser beam
tracking mark
Prior art date
1976-05-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB20809/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Robert Bosch GmbH

Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1976-05-19
Filing date
1977-05-18
Publication date
1980-07-30

1977-05-18
Application filed by Robert Bosch GmbH
filed
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Robert Bosch GmbH

1980-07-30
Publication of GB1572667A
publication
Critical
patent/GB1572667A/en

Status
Expired
legal-status
Critical
Current

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Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

G—PHYSICS

G01—MEASURING; TESTING

G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES

G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems

G01S17/88—Lidar systems specially adapted for specific applications

Description

PATENT SPECIFICATION
( 21) Application No 20809/77 ( 22) Filed 18 May 1977 ( 31) Convention Application No 2622283 ( 32) Filed 19 ( 33) Fed Rep of Germany (DE) ( 44) Complete Specification Published 30 Jul 1980 ( 51) INT CL 3 GOB 15/00 H Ol L 21/68 ( 11) 1 572 667 ( 19) 9 May 1976 in ( 52) Index at Acceptance G 1 A A 7 D 10 ES G 1 513 54 T 14 T 26 H 1 K 4 C 11 4 CSK 4 C 8 G 4 P 12 P 16 Pl R 7 T 3 T 4 T 7 T 8 RL ( 54) IMPROVEMENTS RELATING TO INTEGRATED CIRCUITS ( 71) We, ROBERT BOSCH GMBH a Germany Company, of Postfach 50, 7 Stuttgart 1 Federal Republic of Germany, do hereby declare the invention, for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the
following statement:-
The invention relates to a method for the localization of a solid state wafer of small dimensions in relation to a plane bearing plate.
Integrated circuits are marketed as composite bodies comprising a bearing plate with printed interconnections and the actual semiconductor wafer with the integrated circuit structure The wafer is so attached to the bearing plate that the input and output connections of the circuit structure are in contact with the interconnections, which makes necessary a localization of the wafer in respect of the bearing plate within tolerances which must not exceed a few hundredths of a millimetre Whereas the bearing plates consisting for example of ceramic can readilv be made with the necessary accuracy, and their localization is therefore possible by mechanical means the same accuracy cannot be guaranteed in respect of the dimensions of the solid state wafer The solid state wafers are made by oriented fracture of slabs sawn from a single crystal of the starting material and owing to the fracture, present irregularities along their edge Since the edge of the wafer is the only means that can be used for the mechanical localization, the number of faultily localized wafers in respect of the bearing plate is relatively high in series production.
It is already known that a checking operation can be inserted after the assembly of the wafer with the bearing plate and any badly positioned wafers eliminated For this checking operation in accordance with a known method the image of the wafer surface is projected on a greatly enlarged scale onto a screen provided with tracking marks This method is, however, timeconsuming and uneconomical in series production.
It is the object of the present invention to develop a method allowing an automatic localization of the wafer within narrow tolerances.
The present invention provides a method for the localization of a solid state wafer of small dimensions in relation to a plane bearing plate, wherein a side of the wafer situated parallel with the bearing plate is provided with at least one tracking mark in the form of an optical grating, a laser beam is directed to the desired location of the tracking mark, at least one photodetector is so arranged in relation to the source of the laser beam that a light beam incides on it when the said tracking mark is on the desired location, the said light beam forming one of the secondary maxima of the diffraction pattern generated by the incidence of the laser beam, and on incidence of the light beam onto the detector a signal is released by the latter.
The present invention also provides a solid state wafer wherein the wafer has on two corners of its surface two tracking marks which are in the form of optical gratings, the two gratings being oriented parallel with one another.
The present invention is further described hereafter, by way of example, with reference to the accompanying drawings, in which:
Figure 1 is a plan view of a wafer in accordance with the invention provided with two tracking gratings; Figure 2 is a section through a tracking grating on a greatly enlarged scale; Figure 3 is a representation of the diffraction pattern generated by the tracking grating; C_ Z m t In rFigure 4 is a diagrammatic representation of a device for the realization of a first embodiment of the method in accordance with the invention; Figure 5 is a plan view of a wafer to illustrate a second embodiment of the method; and Figure 6 is a diagrammatic representation of a device which is intended for a second embodiment of the method in accordance with the invention.
In accordance with the invention, diffraction gratings are used as tracking marks which cover certain regions of each wafer.
Thus Figure 1 shows a quadrangular wafer 1 of silicon with an integrated circuit structure 2 on its surface, which is provided on each of the two ends of one side with a circular, approximately 0 1 mm wide, tracking field
Mp, M 2 Each field M,, M, consists of a series of parallel bands 3 of equal width formed in an insulating layer of silicon oxide covering the wafer The bands 3 can be made by etching according to a known process in the silicon oxide layer which has a thickness of a few tenths of a Ri Each band is a few R wide, the division p (Figure 2) of the grating being chosen so that a laser beam directed onto the grating forms a diffraction pattern It should be noted that the bands 3 associated with the two regions M, and M, preferably run parallel with one another and that their direction is chosen obliquely to the principal directions of the structure 2.
The direction of the bands should preferably differ by at least 100 from that of the principal structural elements The incident beam L may be directed vertically or obliquely in relation to the plane of the wafer 1.
It must be contained in a vertical plane, however, whose intersection on the wafer is directed perpendicular to the direction of the bands (plane of Figure 2) Hence the reflected light remains in the same plane and produces on a screen E a diffraction pattern which is formed of light spots 10, 11, 11 ‘, 12 12 ‘ distributed along the line A (Figure 3) The central spot 10 is produced by the regular reflection beam, whilst the lateral spots 11, 11 ‘, 12, 12 ‘ represent the secondary maxima of the diffraction pattern Their distances from the spot 10 depend (inter alia) on the division p of the grating Since the direction of the straight line A depends on the direction of the bands this line revolves around the spot 10 when the wafer is rotated in its plane.
In a first embodiment the method in accordance with the invention consists in the alternating directing of the laser beam L onto the two gratings M, and M, and the releasing of sorting signals by means of the two first secondary diffraction beams which designate the wafer as correct when these secondary beams incide at the right place on the screen E.
To achieve this, the screen E is provided with holes 21, 21 ‘ (Figure 4) etc which are arranged precisely at the places where the said secondary beams incide on the screen when the beam L reaches the grating and when the direction of the bands corresponds to the desired value, i e when the wafers are correctly localized and the regions M, and M 2 are in the desired location In the holes 21, 21 ‘ etc photoelectric detectors 7, 7 ‘ are arranged It is also possible to arrange behind the screen E a lens which focuses the light transversing the holes onto a photodetector.
The device shown schematically in Figure 4 for the realization of the method indicates that the same detectors 7 and 7 ‘ may be used for the checking of the correct localization of both marks M, and M, In this Figure E represents the screen which is provided with a central hole 20 and with two lateral holes 21 and 21 ‘, the hole 20 being transversed by a laser beam L and the holes 21 and 21 ‘ being provided with detectors 7 and 7 ‘.
Underneath the screen E a glass plate 4 with parallel faces is arranged rotatable about an axis XX’ which is directed parallel with the screen E and with the wafer and vertical to the connecting lines of the centre points of the gratings M, and M 2 This glass plate may be pivoted from the position shown in full lines to the symmetrical position drawn in broken lines and designated 4 ‘ The mode of operation of this device is as follows:
When the glass plate 4 is in the position represented by full lines the vertically directed laser beam L is displaced to the left by refraction in the plate 4, so that it then incides vertically onto the desired location of the grating M, If the grating is in its desired location, beams produced by diffraction on the grating will transverse the plate 4 and reach the detectors 7 and 7 ‘ If on the other hand the grating is situated outside the desired location, the laser beam L will be scattered by the surface of the wafer 5 and/or reflected in the direction of the hole 20 Only the scattered light reaches the detectors 7 and 7 ‘ It is much weaker than in the first-mentioned case If a structure boundary of the circuit happen to be present in the desired location of the grating and if this boundary happens to be directed parallel with the grating bands, a diffraction beam would also be produced which would possibly reach the detectors 7 and 7 ‘.
However, such beams would also be much weaker than those in the firstmentioned case By an appropriate calibration of the detectors, the device described here will be enabled to release a signal only when the grating is in the desired location Experiments have confirmed that the diffraction pattern of a laser beam of, for example, 0 1 tic 11 ‘ 121 1 572 667 1 572 667 mm diameter, which incides on a grating of the same diameter, in case of a relative deviation of the effective position of the grating from the desired location, defined by the incident beam of a few hundredths of a mm, is subjected to a weakening which is sufficient for the reliable controlling of the detector to indicate rejection of the wafer concerned.
After the checking of the location of the grating M, the glass plate 4 is pivoted into position 4 ‘ represented by the broken line.
This allows checking of the location of the grating M 2 in the same manner as for grating M, When both gratings of a wafer are in the correct place, an appropriate signal is supplied by the detectors, whilst otherwise, that is when at least one of the two gratings is not in the desired location, the non-occurrence of the signal or the emitting of a rejection signal signifies rejection of the wafer.
Figures 5 and 6 relate to another embodiment of a device for the realization of the method in accordance with the invention, by means of which detected localization faults can be corrected, so that an automatic localization is carried out This device comprises a lens L, arranged parallel with the plane of the wafer 5 a first Wollaston divider prism P, whereby two separate beams q and q’ polarized perpendicular to one another are produced By means of a quarter-wave length plate 7 r/4 the linear polarized beams q and q’ are converted into circular-polarized beams which incide upon a second Wollaston prism P 2 Since the prism P 2 is oriented vertically to prism PI, each beam q and q’ produces two beams separated in such a manner that the laser beam L now divided by 4 and focused by the lens L, onto the wafer 5, forms on this wafer four spots a a’, b, b’ which are located in the corners of a square Now, if a grating M, or M, lies on the desired location defined by the centre of this square, whose diameter is such that the grating cuts onto the four spots four parallel diffraction patterns are produced whose first secondary maxima can be picked up and evaluated by four pairs of detectors.
In Figure 5 the spots corresponding to each grating are designated a a’ b, b’, the spots designated a and a’ being located at the corners of one diagonal of the said square and the two others at the ends of the other diagonal.
By comparison of the indications of the detectors corresponding to the spots a and a’ the sense of the necessary correction along the line a-a’ can be determined.
Similarly the evaluation of the detectors corresponding to spots b and b’ allows determination of the direction of the correction along the line b-b’.
An additional device LP, and LP, allows moreover to simulate the necessary correction and this quantitatively to determine its value LP, and LP, are two plates with parallel faces which are arranged rotatably about an axis arranged parallel with the wafer 5 The axes of rotation of the two plates LP, and LP 2 are directed perpendicular to one another in the said plane By rotation of the plates LP, and LP 2 the light spots generated by the laser beam are displaced by measurable distances on the wafer 5 If the detectors are arranged so that they transmit a zero signal when the light beams receive identical intensity, the position of the plates LP, and LP, assumed on reaching this zero signal indicates the value of the required relative displacement of the wafer in respect of the bearing plate in the directions a-a’ and b-b’, so that the zero signal is produced when the correction plates L Pl and LP, are in a position parallel with the wafer.
The arrangement described here comprises moreover a third, pivoting plate LP which is intended, similarly to plate 4 of Figure 4, to direct the laser beam alternatingly to gratings M, and M, of the wafer examined.
After the two fault values Aa, and Ab 1 in respect of the localization of the grating M, have been determined as described above, it is sufficient in respect of the grating M 2 to determine a single fault value, namely the required displacement Aa 2 in direction a-a’ or, to put it more precisely, the difference Aa 2 Aal between the necessary displacement of the gratings M 2 and M, in direction a-a’ The fault values so obtained serve for shifting the support carrying the wafer 5 or the bearing plate by means of electric motors, cylinder piston units or displacement units of some other kind so that the wafer 5 assumes the desired location in respect of the bearing plate The great advantage of the method here described consists in that the provision of the marks M, and M 2 on each wafer during the fabrication of the integrated circuits requires practically no extra effort The gratings can be formed together with the circuit structure, that is with the same masks and by means of the same operations as those required for the realization of the said structure Moreover the space required by the marks is very small, because the gratings can be formed directly next to the structural elements of the circuit It is also possible, however, to form the gratings by imprinting on the surface of the solder beads projecting from the surface of the wafer and provided for the attachment of the wafer on its bearing plate.

Claims (9)

WHAT WE CLAIM IS:-

1 A method for the localization of a solid state wafer of small dimensions in relation to a plane bearing plate wherein a 1 572 667 side of the wafer situated parallel with the bearing plate is provided with at least one tracking mark in the form of an optical grating, a laser beam is directed to the desired location of the tracking mark, at least one photodetector is so arranged in relation to the source of the laser beam that a light beam incides on it when the said tracking mark is on the desired location, the said light beam forming one of the secondary maxima of the diffraction pattern generated by the incidence of the laser beam, and on incidence of the light beam onto the detector a signal is released by the latter.

2 A method as claimed in claim 1, wherein on each of the two corners of one side of the wafer a tracking mark is provided and that the same laser beam is directed alternatingly to the desired locations of each tracking mark.

3 A method as claimed in claim 1, wherein the said signal released by the detector is an acceptance signal.

4 A method as claimed in claim 1, wherein the laser beam is divided and incides onto different segments of the edge of the tracking mark, different detectors receiving maxima of the diffraction patterns produced by the different partial beams, and a correction signal which is formed by comparison of the signals released by the different detectors, causing a correction of the position of the wafer.

5 A solid state wafer wherein the wafer has on two corners of its surface two tracking marks which are in the form of optical gratings the two gratings being oriented parallel with one another.

6 A solid state wafer as claimed in claim 5, wherein it is a semiconductor wafer with integrated circuit structure.

7 A solid state wafer as claimed in claim 6, wherein the gratings are formed of projecting, parallel bands which are produced by etching of a silicon oxide layer which partially covers the wafer.

8 A solid state wafer as claimed in claim 6 wherein the gratings consist of imprinted grids or gratings formed on the surface of solder beads projecting from the surface of the wafer.

9 A method substantially as hereinbefore described with reference to the accompanying drawings.
A solid state wafer substantially as hereinbefore described with reference to the accompanying drawings.
W P THOMPSON & CO, Coopers Buildings.
Church Street.
Liverpool, LI 3 AB, Chartered Patent Agents.
Printed for Her Majesty’s Stationery Office.
by Croydon Printing Company Limited Croydon Surrey, 1980.
Published by The Patent Office 25 Southampton Buildings, à-L__u;v n,he nhtainect

GB20809/77A
1976-05-19
1977-05-18
Integrated circuits

Expired

GB1572667A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

DE19762622283

DE2622283A1
(en)

1976-05-19
1976-05-19

METHOD FOR LOCATING A SOLID PLATE AND SOLID PLATE FOR CARRYING OUT THE METHOD

Publications (1)

Publication Number
Publication Date

GB1572667A
true

GB1572667A
(en)

1980-07-30

Family
ID=5978395
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB20809/77A
Expired

GB1572667A
(en)

1976-05-19
1977-05-18
Integrated circuits

Country Status (6)

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US
(1)

US4153367A
(en)

JP
(1)

JPS52141179A
(en)

DE
(1)

DE2622283A1
(en)

FR
(1)

FR2352309A1
(en)

GB
(1)

GB1572667A
(en)

NL
(1)

NL7705501A
(en)

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Assignee
Title

DE2836924A1
(en)

1978-08-24
1980-03-06
Blaupunkt Werke Gmbh
Automatic positioning device for electronic components – initiates ultrasound welding of wires between component and support in bonding machine

FR2436967A1
(en)

1978-09-19
1980-04-18
Thomson Csf

METHOD FOR OPTICAL ALIGNMENT OF PATTERNS IN TWO CLOSE PLANS AND ALIGNMENT DEVICE IMPLEMENTING SUCH A METHOD

DE3024679A1
(en)

1980-06-30
1982-01-21
Rainer 7602 Oberkirch Hess
Optical edge detector based on beam reflection – uses cylindrical dispersion lens to obtain wide laser beam

US4333044A
(en)

1980-08-29
1982-06-01
Western Electric Co., Inc.
Methods of and system for aligning a device with a reference target

JPS583227A
(en)

1981-06-29
1983-01-10
Fujitsu Ltd
Chip alignment

US4388386A
(en)

1982-06-07
1983-06-14
International Business Machines Corporation
Mask set mismatch

GB2159939A
(en)

1984-03-02
1985-12-11
Hewlett Packard Co
Detector apparatus

US4645338A
(en)

1985-04-26
1987-02-24
International Business Machines Corporation
Optical system for focus correction for a lithographic tool

JPH0777188B2
(en)

1986-04-24
1995-08-16
株式会社ニコン

Processing equipment

US7167615B1
(en)

1999-11-05
2007-01-23
Board Of Regents, The University Of Texas System
Resonant waveguide-grating filters and sensors and methods for making and using same

US6522406B1
(en)

2001-04-20
2003-02-18
Nanometrics Incorporated
Correcting the system polarization sensitivity of a metrology tool having a rotatable polarizer

US6665070B1
(en)

2001-04-20
2003-12-16
Nanometrics Incorporated
Alignment of a rotatable polarizer with a sample

US7440091B2
(en)

2004-10-26
2008-10-21
Applied Materials, Inc.
Sensors for dynamically detecting substrate breakage and misalignment of a moving substrate

US8276959B2
(en)

2008-08-08
2012-10-02
Applied Materials, Inc.
Magnetic pad for end-effectors

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Publication date
Assignee
Title

US3269254A
(en)

1962-12-31
1966-08-30
Ibm
Optical apparatus for indicating and measuring the roll angular orientation of a movable body

US3544801A
(en)

1969-05-01
1970-12-01
Fairchild Camera Instr Co
Mask design for optical alignment systems

NL7100212A
(en)

1971-01-08
1972-07-11

US3861798A
(en)

1972-05-22
1975-01-21
Hitachi Ltd
Mask for aligning patterns

DE2240968A1
(en)

1972-08-21
1974-03-07
Leitz Ernst Gmbh

OPTICAL METHOD OF MEASURING THE RELATIVE DISPLACEMENT OF A DIFFUSION GRID AND DEVICES FOR ITS IMPLEMENTATION

US3885877A
(en)

1973-10-11
1975-05-27
Ibm
Electro-optical fine alignment process

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(en)

1975-08-28
1976-12-07
Western Electric Company, Inc.
Method and apparatus for monitoring the relative position of a light beam and a grating using Fraunhofer diffraction effects

1976

1976-05-19
DE
DE19762622283
patent/DE2622283A1/en
not_active
Withdrawn

1977

1977-05-16
US
US05/797,191
patent/US4153367A/en
not_active
Expired – Lifetime

1977-05-17
JP
JP5700177A
patent/JPS52141179A/en
active
Pending

1977-05-18
GB
GB20809/77A
patent/GB1572667A/en
not_active
Expired

1977-05-18
NL
NL7705501A
patent/NL7705501A/en
not_active
Application Discontinuation

1977-05-18
FR
FR7715352A
patent/FR2352309A1/en
not_active
Withdrawn

Also Published As

Publication number
Publication date

DE2622283A1
(en)

1977-12-08

JPS52141179A
(en)

1977-11-25

NL7705501A
(en)

1977-11-22

FR2352309A1
(en)

1977-12-16

US4153367A
(en)

1979-05-08

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