GB2001816A – Semiconductor memory device
– Google Patents
GB2001816A – Semiconductor memory device
– Google Patents
Semiconductor memory device
Info
Publication number
GB2001816A
GB2001816A
GB787830894A
GB7830894A
GB2001816A
GB 2001816 A
GB2001816 A
GB 2001816A
GB 787830894 A
GB787830894 A
GB 787830894A
GB 7830894 A
GB7830894 A
GB 7830894A
GB 2001816 A
GB2001816 A
GB 2001816A
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
1977-07-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB787830894A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1977-07-22
Filing date
1978-07-24
Publication date
1979-02-07
1978-07-24
Application filed by Mitsubishi Electric Corp
filed
Critical
Mitsubishi Electric Corp
1979-02-07
Publication of GB2001816A
publication
Critical
patent/GB2001816A/en
Status
Withdrawn
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
1
Classifications
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/06—Auxiliary circuits, e.g. for writing into memory
G11C16/26—Sensing or reading circuits; Data output circuits
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
GB787830894A
1977-07-22
1978-07-24
Semiconductor memory device
Withdrawn
GB2001816A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP8863177A
JPS5423337A
(en)
1977-07-22
1977-07-22
Semiconductor memory unit
Publications (1)
Publication Number
Publication Date
GB2001816A
true
GB2001816A
(en)
1979-02-07
Family
ID=13948146
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB787830894A
Withdrawn
GB2001816A
(en)
1977-07-22
1978-07-24
Semiconductor memory device
Country Status (5)
Country
Link
US
(1)
US4366556A
(en)
JP
(1)
JPS5423337A
(en)
GB
(1)
GB2001816A
(en)
NL
(1)
NL7807820A
(en)
SE
(1)
SE7808044L
(en)
Families Citing this family (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4766572A
(en)
*
1984-12-27
1988-08-23
Nec Corporation
Semiconductor memory having a bypassable data output latch
US4975756A
(en)
*
1985-05-01
1990-12-04
Texas Instruments Incorporated
SRAM with local interconnect
US4791612A
(en)
*
1985-12-18
1988-12-13
Fujitsu Limited
Data programming circuit for programmable read only memory device
US5682110A
(en)
*
1992-03-23
1997-10-28
Texas Instruments Incorporated
Low capacitance bus driver
EP0926686A1
(en)
*
1997-12-23
1999-06-30
STMicroelectronics S.r.l.
Non-volatile, serial-flash, EPROM, EEPROM and flash-EEPROM type memory in AMG configuration
US8320191B2
(en)
2007-08-30
2012-11-27
Infineon Technologies Ag
Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
Family Cites Families (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS502480A
(en)
*
1973-05-08
1975-01-11
US3836894A
(en)
*
1974-01-22
1974-09-17
Westinghouse Electric Corp
Mnos/sos random access memory
JPS51114037A
(en)
*
1975-04-01
1976-10-07
Nec Corp
A peripheral circuit design for fixed insulation-gate semiconductor me mories
US4114055A
(en)
*
1977-05-12
1978-09-12
Rca Corporation
Unbalanced sense circuit
US4122547A
(en)
*
1977-08-09
1978-10-24
Harris Corporation
Complementary FET drivers for programmable memories
1977
1977-07-22
JP
JP8863177A
patent/JPS5423337A/en
active
Pending
1978
1978-07-21
SE
SE7808044A
patent/SE7808044L/en
unknown
1978-07-21
NL
NL7807820A
patent/NL7807820A/en
not_active
Application Discontinuation
1978-07-24
GB
GB787830894A
patent/GB2001816A/en
not_active
Withdrawn
1980
1980-03-31
US
US06/136,461
patent/US4366556A/en
not_active
Expired – Lifetime
Also Published As
Publication number
Publication date
US4366556A
(en)
1982-12-28
NL7807820A
(en)
1979-01-24
SE7808044L
(en)
1979-01-23
JPS5423337A
(en)
1979-02-21
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Legal Events
Date
Code
Title
Description
1982-05-19
WAP
Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)
